1、Ref. Mat. & Ceramics Branch AT&MRef. Mat. & Ceramics Branch AT&MRef. Mat. & Ceramics Branch AT&MRef. Mat. & Ceramics Branch AT&MRef. Mat. & Ceramics Branch AT&MRef. Mat. & Ceramics Branch AT&MRef. Mat. & Ceramics Branch AT&M Thermal Management

2、電路設計電路設計 封裝材料選擇（封裝材料選擇（Heatsink) 生產工藝選擇生產工藝選擇 封裝結構設計封裝結構設計Ref. Mat. & Ceramics Branch AT&MRef. Mat. & Ceramics Branch AT&MRef. Mat. & Ceramics Branch AT&MRef. Mat. & Ceramics Branch AT&MRef. Mat. & Ceramics Branch AT&MRef. Mat. & Ceramics Branch AT&MRe

3、f. Mat. & Ceramics Branch AT&MRef. Mat. & Ceramics Branch AT&M材材 料料成成 分分密密 度度（g/cm3）熱膨脹系數熱膨脹系數（10-6/K）熱導率熱導率（W/mK）AlSiCAl+(50%-70%)SiC3.006.5-9.0170-200CuWW+(10%-20%)Cu15.6-17.06.5-8.3180-200CuMoMo+(15%-20%)Cu10.007.0-8.0160-170AlSi60%Al+40%Si2.5315.4126KovarFe+Ni8.105.917Cu8.9617.83

4、98Al2.7023.6238Si2.304.2151GaAs5.236.554Al2O33.606.717BeO2.907.6250AlN98%purity3.304.5160-200Ref. Mat. & Ceramics Branch AT&M二、熱沉材料的制備工藝二、熱沉材料的制備工藝傳統傳統AlAl2 2O O3 3陶瓷基片生產工藝陶瓷基片生產工藝Ref. Mat. & Ceramics Branch AT&M原料粉末混合原料粉末混合壓坯成型壓坯成型燒結燒結圓盤研磨圓盤研磨CNC加工加工行星研磨行星研磨電鍍電鍍Ni、Au高熱導高熱導WCuWCu、MoC

5、uMoCu、AlNAlN生產工藝生產工藝Ref. Mat. & Ceramics Branch AT&MRef. Mat. & Ceramics Branch AT&MRef. Mat. & Ceramics Branch AT&M優點：工藝流程相對簡單。優點：工藝流程相對簡單。缺點：高能球磨帶入雜質缺點：高能球磨帶入雜質對導熱率影響。對導熱率影響。Ref. Mat. & Ceramics Branch AT&MWO3CuO 混合高能球磨還原WO3+CuOWO3+Cu （300C）WO3+CuWO2.9+Cu （380 C）WO2

6、.9+CuWO2.9+WO2.72Cu （500C）WO2.9+WO2.72CuWO2+Cu （600C）WO2+CuWO2+WCu （650C）WO2+WCuW+Cu （over 700C）Ref. Mat. & Ceramics Branch AT&MRef. Mat. & Ceramics Branch AT&MRef. Mat. & Ceramics Branch AT&MRef. Mat. & Ceramics Branch AT&M國內目前主要采用的工藝，國內目前主要采用的工藝，由于各工序對最終由于各工序對最終CuCu

7、含量均含量均有影響，對精確控制有影響，對精確控制W/CuW/Cu合合金的成分，即精確控制熱導金的成分，即精確控制熱導率上有一定困難。率上有一定困難。Ref. Mat. & Ceramics Branch AT&MRef. Mat. & Ceramics Branch AT&MRef. Mat. & Ceramics Branch AT&MRef. Mat. & Ceramics Branch AT&MRef. Mat. & Ceramics Branch AT&MRef. Mat. & Ceramics B

8、ranch AT&MPROPERTIES DATA Series7001200Densityg/cc3.022.77Thermal Conductivity W/m K210170Thermal Expansion PPM /C6.0 - 8.016.0 18.0Electrical Conductivity%IACS725 27Youngs ModulusGpa224100Thermal CapacityJ/cc C2.222.05Ref. Mat. & Ceramics Branch AT&MRef. Mat. & Ceramics Branch AT&am

9、p;MRef. Mat. & Ceramics Branch AT&MRef. Mat. & Ceramics Branch AT&M熱膨脹系熱膨脹系數數6.56.59.59.51010-6-6/K/K之間任意可調之間任意可調導熱率導熱率 170170200 W/mK200 W/mK電阻率電阻率 30305050cmcm抗彎強度抗彎強度 350350500 MPa500 MPa彈性模量彈性模量 200200230 GPa230 GPa密度密度 2.952.953.00 g/cm3.00 g/cm3 3尺寸范圍尺寸范圍 3 33 30.5 mm0.5 mm3 31

10、00100606010 mm10 mm3 3尺寸精度尺寸精度 0.05mm0.05mm表面粗糙表面粗糙度度 1.61.63.2m3.2m鍍層厚度鍍層厚度 3 310m10m鍍層質量鍍層質量 400400空氣烤空氣烤15min15min，鍍層無起泡、起，鍍層無起泡、起 皮或變色現象皮或變色現象Ref. Mat. & Ceramics Branch AT&M超高熱導熱沉材料 CVD金剛石薄膜Ref. Mat. & Ceramics Branch AT&MRef. Mat. & Ceramics Branch AT&M 熱絲熱絲CVDCVD制備金剛石薄

11、膜的基本原理是將制備金剛石薄膜的基本原理是將含碳氣源（如甲烷）和氫氣在燈絲產生含碳氣源（如甲烷）和氫氣在燈絲產生的高溫（的高溫（20002000C C以上）作用下分解離化以上）作用下分解離化后產生含碳基團和原子氫等，他們的相后產生含碳基團和原子氫等，他們的相互作用促使構成金剛石的互作用促使構成金剛石的SP3SP3雜化碳碳雜化碳碳鍵的形成，從而在基體（溫度鍵的形成，從而在基體（溫度600-600-10001000C C）表面沉積金剛石薄膜。）表面沉積金剛石薄膜。Ref. Mat. & Ceramics Branch AT&MRef. Mat. & Ceramics Branch AT&MRef. Mat. & Ceramics Branch AT&MRef. Mat. & Ceramics Branch AT&MRef. Mat. & Ceramics Branch AT&MRef. Mat. & Ceramics Branch AT&MRef. Mat. & C