1、Pvsyst 后臺參數(shù)的翻譯Grid-connected systempre-sizing并網(wǎng)系統(tǒng)初步設置Monocrystalline module efficiency單晶組件效率Polycrystalline efficiency多晶組件效率Thin film efficiency薄膜組件效率Free standing temperature correction自由安裝溫度糾正系數(shù)Roof ventilated temperature correction屋頂通風溫度糾正系數(shù)No ventilation temperature correction無通風溫度糾正系數(shù)Ohmic wiri

2、ng loss mismatch loss correction線纜歐姆損失，失配損失糾正系數(shù)IAM incidene anglemodifier correction入射角改變糾正系數(shù)Inverter average efficiency逆變器平均效率Stand-alone systempre-sizing獨立系統(tǒng)初步設計Stand-alone:pv-array=>battery globa efficiency陣列到電池整體效率Batterycharge/discharge energy efficiency電池充放電能量效率Soc minimum threshold荷電率最小閾值B

3、attery capacity:C100/C10 ratio100小時率比 10 小時率系數(shù)Generatorefficiency(15%=1.5kwh/liter)發(fā)電機效率Pumping:pv-array daily effic(optical,thermal ,etc)光伏水泵方陣綜合效率(光，熱等 ) Matching effic（ thresh.andmppt loss ）direct coupling直接耦合匹配效率（閾值及最大跟蹤損失）Matching effic （ thresh.andmppt loss） with booster升壓耦合匹配效率（閾值及最大跟蹤損失）Matc

4、hing effic （ thresh.andmppt loss）cascading級聯(lián)匹配效率 （閾值及最大跟蹤損失）Global effic.withfixed V DC converter固定電壓直流變換器耦合的綜合效率Global effic.withmppt converter mppt逆變器耦合綜合效率DC-positive displacement pump efficiency直流容積泵效率AC-positive displacement pump efficiency交流容積泵效率Centrifugal pump efficiency離心泵效率Oversizing(pv fi

5、eld stc-losses)/pump power裕度（光伏陣列 /泵功率）Specific pre-sizing costs(all systems)所有系統(tǒng)初步設計價格Loan duration(=sexpected system lifetime)系統(tǒng)壽命 25 yearScale exponential factor(mouning and maintenance)規(guī)模指數(shù)因子 0.6Systemdesign parameters系統(tǒng)設計參數(shù)Minimum temperature for inverter Vmax design（需相應改動）逆變器最大電壓設計使用的最低溫度Winte

6、r operating temp.for inverter VmppMax design（需相應改動）逆變器跟蹤最大電壓值設計冬季運行溫度Usual operating temperature at r1000W/m（需相應改動）平常運行溫度Summer operating temp.for inverter VmppMin design（需相應改動）逆變器跟蹤最小電壓值設計夏季運行溫度Voltage initial degradation amorphous非晶硅初期壓降Voltage initial degradation,microcrystalline微晶硅初期壓降Voltage in

7、itial degradation.CdTe碲化鎘太陽能組件初期壓降Heat loss factor free mounting自由安裝式熱損失因子Heat loss factor semi integrated半集成式熱損失因子Heat loss factor fully integrated集成式熱損失因子Heat loss factor according to wind velocity根據(jù)風速定義的熱損失因子Heat loss factor max./min. value熱損失最大 /最小值Incidence angle modifier bo parameter入射角改變糾正系數(shù)C

8、opper Resistivity(at T=50度 )銅電阻率Aluminium Resistivity(at T=50度)鋁電阻率Max. wire section for specific admissible current對特定電流最大可接受線纜截面積Max. admissiblecurrent derating factor最大可允許電流衰減Default wiring resistance loss ratio at STC標況下默認線阻損失率Array resitance voltage drop at STC標況下陣列阻耗壓降Irrad.absorption coeffici

9、ent for tarray calculation陣列計算用輻射吸收系數(shù)Module dfficiency fortemp.array calculation陣列計算用組件效率Series diode voltage drop二極管壓降External transfo:iron losses外置變壓器鐵損External transfo:resist losses at STC外置變壓器銅損Light soaking gain factor光輻照增益系數(shù)Default module quality factor默認組件質(zhì)量因數(shù)Module quality loss:tolerance fra

10、ction組件質(zhì)量因數(shù)公差LIDloss factorLID 損失因子Default array mismatch power loss,crystalline默認陣列功率失配損失，晶硅組件Default array mismatch power loss, amorphous默認陣列功率失配損失，非晶硅Default array mismatch voltage loss ,crystalline默認陣列電壓失配損失，晶硅組件Default array mismatch voltage loss , amorphous默認陣列電壓失配損失，非晶硅Default soilingloss,yea

11、rly average 默認年平均臟污損失Default unavailability loss默認無效損失Module strings shading ratio組串陰影率Module strings thin film shading ratio組串薄膜陰影率Grid inverter oversizing array/inverter nominal power并網(wǎng)陣列功率 /逆變器裕度值SolaredgePnom ratio sizing,0=STC,1=real conditionsSolaredge 功率比定型 0= 標況， 1= 真實條件Nominal medium voltag

12、e grid默認中壓網(wǎng)絡DC grid:arrayVnom/system Vnom ratio直流網(wǎng)：組件電壓/系統(tǒng)電壓Average pumping hours during a clear day晴空下平均抽水時間Pumps lifetime(economical evaluation)水泵壽命Fuel price (economical evaluation)燃油價格Flowrate oversizing accounting for average days平均流量裕度值Array current /pumps nominal current陣列電流 /泵額定電流Detailed si

13、mulation verification conditions詳細模擬檢定條件Measured meteo in coll.plane:max.orientation difference吸收平面測量數(shù)據(jù)最大方位差Shading:max.orientation difference shaded #1-pv array遮光：遮光 #1 陣列最大方位差Shading:max.orientation difference between shading planes遮光：遮光平面允許最大方位差Shadings with heterogeneous field:max.angle differen

14、ce異形區(qū)域遮光最大角度差Helios3D:max.angle between palnes Helios3D:平面間最大角度差Shading:absolutemin.shading/field area ratio遮光： 3D 區(qū)域 /系統(tǒng)定義區(qū)域絕對極小值Shading:warningmin. shading/field area ratio遮光： 3D 區(qū)域 /系統(tǒng)定義區(qū)域禁告極小值Shading:warningmax.shading/field area ratio遮光： 3D 區(qū)域 /系統(tǒng)定義區(qū)域禁告極大值Shading:absolutemax.shading/field area

15、ratio遮光： 3D 區(qū)域 /系統(tǒng)定義區(qū)域絕對極大值the inverter power is strongly oversized逆變器功率值嚴重過大the inverter power is slightly oversized逆變器功率值輕微過大acceptable overload loss for design可接受設計過載損失limit overload loss for design設計過載損失限值pv array/battery pack voltage：光伏陣列 /蓄電池電壓strongly undersized/oversized光伏陣列 /蓄電池電壓嚴重過小/過大sli

16、ghtly undersized/oversized光伏陣列 /蓄電池電壓輕微過小/過大pv array/regulator voltage：光伏陣列 /控制器電壓pv array/ regulator power：光伏陣列 /控制器功率the battery pack capacity is perhaps：電池組容量the pv array power is slightly undersized/oversized陣列容量輕微過小 /過大 the pv array power isstrongly undersized/oversized陣列容量嚴重過小/過大 the pumping f

17、lowrate is stronglyundersized/oversized 水泵流量嚴重過小/過大 the pumping flowrate is slightly undersized/oversized水泵流量輕微過小 /過大pumping: the array voltage is strongly undersized/oversized陣列電壓嚴重過小 /過大 pumping: thearray voltage is slightly undersized/oversized陣列電壓輕微過小 /過大 pumping: the array current isstrongly un

18、dersized/oversized陣列電流嚴重過小/過大 pumping: the array current is slightlyundersized/oversized 陣列電流輕微過小/過大 光伏組件：EGap-Si-Mono 單晶硅禁帶寬度 EGap -Si-poly多晶硅禁帶寬度EGapa-Si:H tandem 雙結(jié)氫化非晶硅禁帶寬度EGapa-si:H triple 三結(jié)氫化非晶硅禁帶寬度EGapucSia-Si:H 微晶硅氫化非晶硅雙結(jié)電池禁帶寬度EGapCdTe碲化鎘薄膜電池禁帶寬度EGap CIS 銅銦硒 (CIS) 薄膜電池禁帶寬度EGap CSG：CSG （Crys

19、taIIineSiIiconONGIass）電池禁帶寬度EGap HIT異質(zhì)結(jié)太陽能電池禁帶寬度EGapAsGa砷化鉀太陽能電池禁帶寬度EGap Galnp2/GaAs/GeGalnp2/GaAs/Ge三結(jié)太陽能電池禁帶寬度EGap Not Registered 未定義電池禁帶寬度Built-in voltage for amorphous tripple， add to Vmp 非晶硅三結(jié)太陽能電池峰值電壓Built-in voltage for amorphous single非晶硅單結(jié)太陽能電池峰值電壓Built-in voltage for amorphous tandem非晶硅雙結(jié)太

20、陽能電池峰值電壓Crystalline:Rsho/Rsh default multiplier value晶硅： Rsho/Rsh 默認乘數(shù)值Amorphous:Rsho/Rsh default multiplier value非晶硅： Rsho/Rsh 默認乘數(shù)值RShexp exponential parameterRShexp指數(shù)Thin films:Pmpp Temperature coefficient薄膜：峰值功率溫度系數(shù)Gamma defult for Rserie optimization Si-poly多晶硅串聯(lián)電阻最優(yōu)化默認Gamma值Gamma defult for RS

21、erie optimization Si-mono單晶硅串聯(lián)電阻最優(yōu)化默認Gamma值Gamma defult for RSerie optimization a-Si:H tandem氫化非晶硅雙結(jié)電池串聯(lián)電阻最優(yōu)化默認Gamma 值Gamma defult for RSerie optimization a-Si:H triple氫化非晶硅三結(jié)電池串聯(lián)電阻最優(yōu)化默認Gamma值defult for RSerie optimization ucSia-Si:H多晶硅串聯(lián)電阻最優(yōu)化默認Gamma值Gamma defult for RSerie optimization CdTe碲化鎘薄膜電池串

22、聯(lián)電阻最優(yōu)化默認Gamma值Gamma defult for RSerie optimization CIS銅銦硒 (CIS) 薄膜電池串聯(lián)電阻最優(yōu)化默認Gamma值Gamma defult for RSerie optimization CSGCSG（ CrystaIIineSiIiconONGIass）電池串聯(lián)電阻最優(yōu)化默認Gamma值Gamma defult for RSerie optimization HIT異質(zhì)結(jié)太陽能電池串聯(lián)電阻最優(yōu)化默認Gamma值Gamma defult for RSerie optimization AsGa砷化鉀串聯(lián)電阻最優(yōu)化默認Gamma值Gamma d

23、efult for RSerie optimization Galnp2/GaAs/GeGalnp2/GaAs/Ge串聯(lián)電阻最優(yōu)化默認Gamma值Gamma defult for RSerieoptimization,unregistered未定義太陽能電池串聯(lián)電阻最優(yōu)化默認Gamma值Min lo value for Galnp2/GaAs/Ge： Galnp2/GaAs/Ge最小 lo值Min lo value for all others：其他電池的最小 lo 值Min./Max.VmppCell,Si- Crystalline：晶硅最小 /最大峰值電壓Min./Max.VmppCell

24、,a-Si:Htandem：雙結(jié)氫化非晶硅最小 /最大峰值電壓Min./Max.VmppCell,a-Si:Htriple junction：三結(jié)氫化非晶硅最小/最大峰值電壓Min./Max.VmppCell,ucSia-Si:H：微晶硅氫化非晶硅雙結(jié)電池最小/最大峰值電壓Vmpp Cell,ucSia-Si:H ：微晶硅氫化非晶硅雙結(jié)電池最大峰值電壓Min./Max.Vmpp Cell, CdTe：碲化鎘薄膜電池最小/最大峰值電壓Min./Max.Vmpp Cell, CIS：銅銦硒 (CIS) 薄膜電池最小 / 最大峰值電壓Min./Max.VmppCell,CSG：CSG（ Crysta

25、IIineSiIiconONGIass ）最小 / 最大峰值電壓Min./Max.Vmpp Cell,HIT ：異質(zhì)結(jié)太陽能電池最小/最大峰值電壓Min./Max.Vmpp Cell, AsGa：砷化鉀太陽能電池最小/最大峰值電壓Min./Max.Vmpp Cell,Galnp2/GaAs/Ge： Galnp2/GaAs/Ge 三結(jié)太陽能電池最小/最大峰值電壓Min./Max.Vmpp Cell, unregistered：未定義電池最小峰值電壓Max. Imp/Isc ratio： Imp/Isc最大比值Max.Vmp/Isc ratio： Vmp/Isc最大比值Max.mulsc/Isc

26、ratio：mulsc/Isc最大比值Max.Pmpp deviationat STCby respect to Pnom：標況與實際情況下功率誤差Rshun min calculation:securitycoeff.vs MPP：并聯(lián)電阻電小值計算： mpp安全系數(shù)Rserie default calculation:Min./Max.RSerie/RSmax ratio串聯(lián)電阻默認計算：最大/最小 RSerie/RSmax比值D2/MuTaucalculation:Max. RSerie/RSmax ratioD2/MuTau計算： Max. RSerie/RSmax比值Amorphou

27、s Recombin.loss factor:非晶硅復合損失因子：D2/MuTau default valueD2/MuTau默認值By-pass diode resistance10mv/A：旁路二極管電阻efaultBRev parameter ratio：默認 BRev參數(shù)率Regulators and converters： 10 小時率下壓降Charging triggering OFF：充電截止電壓閾值，關(guān)閉閾值open batteries：開口式蓄電池sealed batteries ：密封式蓄電池AGM batteries：蓄電池 Ni-Cd batteries ：蓄電池Cha

28、rging triggering ON again ：充電開啟電壓閥值Discharging triggering OFF：放電截止電壓閾值Discharging triggering ON again：放電截止電壓閾值Back-up generator triggering ON again：備用發(fā)電機開啟閾值Back-up generator triggering OFF：備用發(fā)電機關(guān)閉閾值Temper. Coefficient (per element)溫度系數(shù)（單格）Reference temperature for these thresholds對這些閾值的參考溫度Minimum

29、hysteresis for swiching(per element)切換時最小磁滯（單格）Initial SOC for simulation仿真初始荷電狀態(tài)MPPT converters:power thresh./pnom lower limit：MPPT 逆變器：功率閾值/正常功率下限值MPPT converters:defaultmax.efficiency： MPPT逆變器：默認最大效率MPPT converters:defaultEURO.efficiency： MPPT逆變器：默認最大歐洲效率Normalized resistance factor：標準化電阻因數(shù)Max./Minimum value of the max.effciency：最大效率的最大/最小值Minimum efficiency difference maxEURO ：最小歐洲效率的偏差值Max. efficiency difference maxEURO ：最大歐洲效率的偏差值Minimum difference between legal an