半導體光電子學的新進展

RecentProgressonSemiconductorBased

Opto-electronicDevices羅毅YiLUO集成光電子國家重點實驗室清華大學

電子工程系StateKeyLabonIntegratedOptoelectronicsDept.ofElectronicEngineering,TsinghuaUniversity2025/5/251BackgroundTheDemandforMoreBandwidth Internet,multimediacommunications,andetcMethodstoIncreaseSystemCapacity WDM(Wavelength-DivisionMultiplexing) OTDM(OpticalTime-DivisionMultiplexing)BenefitsofWDMtechniques FlexibilityandscalabilityforavarietyofnetworkarchitecturesWDMtechniquesarethebackboneofmodernopticalfibernetworks2025/5/252StateKeyLabonIntegratedOptoelectronics2025/5/253StateKeyLabonIntegratedOptoelectronics2025/5/254StateKeyLabonIntegratedOptoelectronicsKeyDevicesforWDMOpticalFiberNetworkSystemsLightSourcesLow-costuncooledLDsDirectlymodulatedLDsModulatorintegratedDFBLDsWavelengthtunable/selectableLDsHigh-SpeedPhotodetectorsSOAandWavelengthConverterAWGandRelated2025/5/255StateKeyLabonIntegratedOptoelectronics2025/5/256StateKeyLabonIntegratedOptoelectronicsLow-CostUncooledLDsApplicationsAccessnetworkMetropolitantransmissionBitrate:155MB/s(FP-LDs)~10Gb/s(DFB-LDs)Requirements

WidetemperaturerangeoperationCost-effectivestructurefordevicefabricationHighefficiencyandlargetoleranceforcouplingoutputlightintoasinglemodefiber2025/5/257StateKeyLabonIntegratedOptoelectronicsUncooledGain-CoupledDFBLDsStablesinglemodeoperationfrom-40to85C

Integratedbeam-expanderforimprovedcouplingtoleranceGain-coupledDFBlaserswithcurrent-blockinggratings2025/5/258StateKeyLabonIntegratedOptoelectronicsDirectlyModulatedDFBLDsApplicationsGigabitEthernetMetropolitantransmissionBitrate:upto10Gb/sWavelength:1.3m&1.55mLimitationsLimitedtransmissionspan(<20km)duetolargelinewidthenhancementfactor(>4)

Modulationspeedislimitedbycarrierrelaxationoscillation2025/5/259StateKeyLabonIntegratedOptoelectronics10Gb/sDirectlyModulatedDFBLDsfor

MetropolitanDataTransmissionSmall-signalRFResponseBERCharacteristics2025/5/2510StateKeyLabonIntegratedOptoelectronicsEAModulatorIntegratedDFBLDsApplicationsTrunklinetransmissionBitrate:2.5Gb/s~40Gb/sAdvantagesCompactsizeLowcouplinglossLowfrequencychirpingReducedcostImprovedreliability2025/5/2511StateKeyLabonIntegratedOptoelectronics10Gb/sEAModulatorIntegratedDFBLDsforTrunkLineCommunicationsTransmissionlength:100kmFeature:Lowpowerpenalty(<1.5dB)&Widebandwidth(~14GHz)2025/5/2512StateKeyLabonIntegratedOptoelectronics10Gb/sEAModulatorIntegratedDFBLDsEyeDiagramBERPerformance2025/5/2513StateKeyLabonIntegratedOptoelectronicsWavelengthTunable/SelectableLDsAdvantagesAbilitytorestorefailedchannelsReducedtransmittercostIncreasedflexibilityforfuturenetworkmanagingWavelengthTunablevs.WavelengthSelectableWavelengthTunableLDs:BasedonDBRstructures

Compactdevicestructure Poorreliability&ElectriccrosstalkathighfrequencyWavelengthSelectableLDs:BasedonDFBLDarrays Relativelycomplicateddevicestructure

Improvedreliabilityandwavelengthstability2025/5/2514StateKeyLabonIntegratedOptoelectronicsMulti-rangeWavelengthSelectableLDsForuseinback-up&add-dropinDWDMphotonicnetworkDFB-LDsintegratedwithMMIcoupler,SOA,andEAmodulatorCompactsize(400m2840m)2025/5/2515StateKeyLabonIntegratedOptoelectronicsMulti-RangeWavelengthSelectableLDArraysforDWDMSystems15nm/chipwavelengthselectablerangeWavelength&ThresholdcurrentLasingSpectra2025/5/2516StateKeyLabonIntegratedOptoelectronicsHigh-SpeedPhotodetectorsConventionalConfigurationsSurfaceilluminatedp-i-nphotodetectorAvalanchephotodetector(APD)Limitations

LimitedbandwidthforAPDdetectorsTrade-offbetweenbandwidthandefficiencyforsurfaceilluminatedp-i-ndetectorsCurrentTrendSideilluminatedstructureWaveguidep-i-nphotodiodes2025/5/2517StateKeyLabonIntegratedOptoelectronicsWidebandWaveguidePhotodiode

for40Gb/sSystemsMonolithicreceivercomposedofmultimodewaveguidep-i-nphotodiodeandaHEMTdistributedampli