ISO/IEC17025ISO/IEC17025No.CNASNo.CNAS第10頁共NUMPAGES69ShouldtherebeanyinconsistenciesbetweenChineseandEnglishversionsofthescopeofaccreditation,theChineseversionshallprevailinthattheEnglishversionisprovidedbytheconformityassessmentbodyandisforreferenceonly. 序號地址能力范圍評審類型更新時間1A授權(quán)簽字人(中文201310222授權(quán)簽字人(英文201310223授權(quán)簽字人(中文監(jiān)督+201501134授權(quán)簽字人(英文監(jiān)督+201501135A檢測能力(中文201310226檢測能力(英文201310227檢測能力(中文監(jiān)督+201501138檢測能力(英文監(jiān)督+20150113Name：Xi'anXiguMicroelectronicsCo.,Ltd.TestingRegistrationNo.：L4413A:Room10402,Building2,ModernBusinessCenter,No.12,SectionA,ChuangyeYanfaPark,No.69,JinyeRoad,High-TechZone,Xi'an,Shaanxi,ChinaINDEXOFACCREDITEDUpdate1AApprovedsignatories2013-10-2Approvedsignatories2013-10-3Approvedsignatories2015-01-4Approvedsignatories2015-01-5ATesting2013-10-6Testing2013-10-7Testing2015-01-8Testing2015-01-中國合格評定國家認(rèn)可委員認(rèn)可證書附（注冊號：CNAS69A12中心東區(qū)2號樓10402室簽發(fā)日期：2013年10月22日 有效期至：2016年10月21日更新日期：2013年10月22日序號 序號 授權(quán)簽字領(lǐng)域 12 3CHINANATIONALACCREDITATIONSERVICEFORCONFORMITYAPPENDIXOFACCREDITATION(RegistrationNo.CNASNAME:Xi'anXiguMicroelectronicsCo.,Ltd.ComponentTestingCenterADDRESS:Room10402,Building2,ModernBusinessCenter,No.12,SectionA,ChuangyeYanfaPark,No.69,JinyeRoad,High-TechZone,Xi'an,Shaanxi,ChinaDateofIssue:2013-10- DateofExpiry:2016-10-DateofUpdate：2013-10-APPENDIX ACCREDITEDSIGNATORIESAND№AuthorizedScopeof1HongbinAlltest2JunAlltest3WeipingAlltest中國合格評定國家認(rèn)可委員認(rèn)可證書附（注冊號：CNAS69A12中心東區(qū)2號樓10402室認(rèn)可依據(jù)：ISO/IEC17025:2005CNAS簽發(fā)日期：2013年10月22日 有效期至：2016年10月21日更新日期：2013年10月22日附件 認(rèn)可的檢測能力范檢測對象項(xiàng)目/參數(shù)領(lǐng)域代碼檢測標(biāo)準(zhǔn)（方法）及編號（含年號）限制范圍說明序號名稱1CMOS1VOH23IIH-+250檢測對象項(xiàng)目/參數(shù)領(lǐng)域代碼檢測標(biāo)準(zhǔn)（方法）及編號（含年號）限制范圍說明序號名稱1CMOS4電流IIL-+250567IOZH8921VIK234-+20056電流檢測對象項(xiàng)目/參數(shù)領(lǐng)域代碼檢測標(biāo)準(zhǔn)（方法）及編號（含年號）限制范圍說明序號名稱27IOS-+2008電流9IOZHIOZL31VOH23 -檢測對象項(xiàng)目/參數(shù)領(lǐng)域代碼檢測標(biāo)準(zhǔn)（方法）及編號（含年號）限制范圍說明序號名稱34IOZH-5IOZL6IDD7ICC8IBB9IDDSICCSIBBS41-~檢測對象項(xiàng)目/參數(shù)領(lǐng)域代碼檢測標(biāo)準(zhǔn)（方法）及編號（含年號）限制范圍說明序號名稱42-~3-4IQ-5-51VIO-2IIO-~-3 4-檢測對象項(xiàng)目/參數(shù)領(lǐng)域代碼檢測標(biāo)準(zhǔn)（方法）及編號（含年號）限制范圍說明序號名稱55 678+409IOS-+40061VIO-2IIO-~-3IIB-~-檢測對象項(xiàng)目/參數(shù)領(lǐng)域代碼檢測標(biāo)準(zhǔn)（方法）及編號（含年號）限制范圍說明序號名稱64-+4005AVD678+409IOH--71GB/T17007-19972檢測對象項(xiàng)目/參數(shù)領(lǐng)域代碼檢測標(biāo)準(zhǔn)（方法）及編號（含年號）限制范圍說明序號名稱73ICESGB/T17007-19974壓81VFGJB128A-V2IRV9121GJB360B-1檢測對象項(xiàng)目/參數(shù)領(lǐng)域代碼檢測標(biāo)準(zhǔn)（方法）及編號（含年號）限制范圍說明序號名稱2GJB360B-31GJB548B--2A134561和穩(wěn)壓管GJB128A-率2老煉（管檢測對象項(xiàng)目/參數(shù)領(lǐng)域代碼檢測標(biāo)準(zhǔn)（方法）及編號（含年號）限制范圍說明序號名稱3GJB128A-C45H16400g度1GJB360B--23400g度4ISO/IEC17025ISO/IEC17025No.CNASNo.CNAS第20頁共NUMPAGES69ShouldtherebeanyinconsistenciesbetweenChineseandEnglishversionsofthescopeofaccreditation,theChineseversionshallprevailinthattheEnglishversionisprovidedbytheconformityassessmentbodyandisforreferenceonly.CHINANATIONALACCREDITATIONSERVICEFORCONFORMITYAPPENDIXOFACCREDITATION(RegistrationNo.CNASNAME:Xi'anXiguMicroelectronicsCo.,Ltd.ComponentTestingCenterADDRESS:Room10402,Building2,ModernBusinessCenter,No.12,SectionA,ChuangyeYanfaPark,No.69,JinyeRoad,High-TechZone,Xi'an,Shaanxi,ChinaAccreditationCriteria:ISO/IEC17025:2005andrelevantrequirementsofDateofIssue:2013-10- DateofExpiry:2016-10-DateofUpdate：2013-10-APPENDIX2ACCREDITED№TestCodeofTitle,CodeofStandardorMethod№一、COMPONENT1CMOScircuitsofintegratedcircuits1integratedcircuitsGeneralprinciplesofmeasuringmethodsforCMOSOnlyfor2№TestCodeofTitle,CodeofStandardorMethod№3h-LevelOnly-1CMOScircuitsofintegratedcircuits4w-LevelintegratedcircuitsGeneralprinciplesofmeasuringmethodsforCMOSOnly-5OutputHigh6OutputCurrent7anceOutput8anceOutput9№TestCodeofTitle,CodeofStandardorMethod№2TTLcircuitsofintegratedcircuits1InputClampGeneralprinciplesofmeasuringmethodsofTTLcircuitsforintegratedcircuitsOnlyfor2TTLcircuitsofintegratedcircuits2GeneralprinciplesofmeasuringmethodsofTTLcircuitsforintegratedcircuitsOnlyfor34CurrentIIOnly-20056№TestCodeofTitle,CodeofStandardorMethod№7Current8Current2TTLcircuitsofintegratedcircuits9anceOutputGeneralprinciplesofmeasuringmethodsofTTLcircuitsforintegratedcircuitsOnly-200anceOutputCurrentOnlyfor№TestCodeofTitle,CodeofStandardorMethod№3MOSrandomaccessmemoryofintegratedcircuits1GeneralprinciplesofmeasuringmethodsofMOSrandomaccessmemoryforintegratedcircuitsOnlyfor3MOSrandomaccessmemoryofintegratedcircuits2GeneralprinciplesofmeasuringmethodsofMOSrandomaccessmemoryforintegratedcircuitsOnlyfor3CurrentILIOnly-2004anceOutput5anceOutput6Onlyfor№TestCodeofTitle,CodeofStandardorMethod№7Current8BBCurrentIBB3MOSrandomaccessmemoryofintegratedcircuits9GeneralprinciplesofmeasuringmethodsofMOSrandomaccessmemoryforintegratedcircuitsOnlyforBBPin4voltageregulatorofSemiconductorintegrated1integratedcircuitsGeneralprinciplesofmeasuringmethodsofvoltagefor-2for-№TestCodeofTitle,CodeofStandardorMethod№34voltageregulatorofSemiconductorintegrated4CurrentIQ、integratedcircuitsGeneralprinciplesofmeasuringmethodsofvoltage55e)amplifiersofintegratedcircuits1InputOffsetGeneralprinciplesofmeasuringmethodsofamplifiersforintegratedcircuitsOnly-20mV~-VV2InputOffsetCurrentOnly-~-A3InputCurrent4nPD№TestCodeofTitle,CodeofStandardorMethod№5Large-lVoltageGainOnlyfor62dB5e)amplifiersofintegratedcircuits6GeneralprinciplesofmeasuringmethodsofamplifiersforintegratedcircuitsOnlyfor62dB78Onlyfor-40 +409Current6comparatorsof1InputOffset GeneralprinciplesofmeasuringmethodsforvoltageOnly-20mV~-VV№TestCodeofTitle,CodeofStandardorMethod№2InputOffsetCurrentOnly-~-A6comparatorsof3InputBiasCurrent GeneralprinciplesofmeasuringmethodsforvoltageOnly-~-A4nfor-5lVoltageGainOnlyfor62dB678Onlyfor-40 +40№TestCodeofTitle,CodeofStandardorMethod№96comparatorsofOutputHigh Generalprinciplesofmeasuringmethodsforvoltagefor-OutputCurrentSelectPinCurrent7bipolartransistor1rThresholdMeasuringmethodsforinsulated-gatebipolartransistorOnlyfor2Onlyfor3Onlyfor4Onlyfor№TestCodeofTitle,CodeofStandardorMethod№81TestmethodsofdiscreteOnlyfor+40A82TestmethodsofdiscretedevicesOnlyfor91ToEmitterOnlyfor2 Onlyfor1TestmethodsforelectronicandelectricalcomponentOnlyfor1TestmethodsforelectronicandelectricalcomponentOnlyfor2Onlyfor93Onlyfor№TestCodeofTitle,CodeofStandardorMethod№二、COMPONENT1eCyclingTestmethodsandproceduresforOnlyfor-2Onlyfor3PINDOnlyfor45BURN-6Onlyfordiscrete1BURN-ForDiodesTestmethodsofdiscretedevicesOnlyfor2BURN-3BURN-AndLifeTestForAndIGBTOnlyforMETHODA、B、№TestCodeofTitle,CodeofStandardorMethod№discrete4eCycling(AirToAir)TestmethodsofdiscretedevicesOnlyfor-5OnlyforMETHODC、6PINDOnlyforElectronicandcomponentparts1TestmethodsforelectronicandelectricalcomponentOnlyfor-2OnlyforMETHODC、3PINDOnlyfor4Onlyfor中國合格評定國家認(rèn)可委員認(rèn)可證書附（注冊號：CNAS69A12中心東區(qū)2號樓10402室簽發(fā)日期：2013年10月22日 有效期至：2016年10月21日更新日期：2015年01月13日序號 序號 授權(quán)簽字領(lǐng)域 12 3CHINANATIONALACCREDITATIONSERVICEFORCONFORMITYAPPENDIXOFACCREDITATION(RegistrationNo.CNASNAME:XianXiguMicroelectronicsCo.,Ltd.ComponentTestingCenterADDRESS:Room10402,Building2,ModernBusinessCenter,No.12,SectionA,ChuangyeYanfaPark,No.69,JinyeRoad,High-TechZone,Xian,Shaanxi,ChinaDateofIssue:2013-10- DateofExpiry:2016-10-DateofUpdate：2015-01-APPENDIX ACCREDITEDSIGNATORIESAND№AuthorizedScopeof1HongbinAllprojectsapplyingfor2JunAllprojectsapplyingfor3WeipingAllprojectsapplyingfor中國合格評定國家認(rèn)可委員認(rèn)可證書附（注冊號：CNAS69A12中心東區(qū)2號樓10402室認(rèn)可依據(jù)：ISO/IEC17025CNAS簽發(fā)日期：2013年10月22日 有效期至：2016年10月21日更新日期：2015年01月13日附件 認(rèn)可的檢測能力范檢測對象項(xiàng)目/參數(shù)檢測標(biāo)準(zhǔn)（方法）及編號（含年號）限制范圍說明序號名稱1CMOS1電壓VOH2電壓VOL3電流IIH-+250檢測對象項(xiàng)目/參數(shù)檢測標(biāo)準(zhǔn)（方法）及編號（含年號）限制范圍說明序號名稱1CMOS4電流IIL-+2505電流IOH6電流IOL7IOZH8IOZL921VIK2電壓VOH3電壓VOL4-+2005電流IIH6電流檢測對象項(xiàng)目/參數(shù)檢測標(biāo)準(zhǔn)（方法）及編號（含年號）限制范圍說明序號名稱27IOS-+2008電流IO9IOZHIOZL31電壓VOH2電壓VOL3 -檢測對象項(xiàng)目/參數(shù)檢測標(biāo)準(zhǔn)（方法）及編號（含年號）限制范圍說明序號名稱34IOZH-5IOZL6789VDDVCCVBB41-~檢測對象項(xiàng)目/參數(shù)檢測標(biāo)準(zhǔn)（方法）及編號（含年號）限制范圍說明序號名稱42-~3-4IQ(V)和-5-51VIO-2IIO-~-3 4-檢測對象項(xiàng)目/參數(shù)檢測標(biāo)準(zhǔn)（方法）及編號（含年號）限制范圍說明序號名稱55益AVD67制比KSVR8電壓VOPP+409IOS-+40061VIO-2IIO-~-3IIB-~-檢測對象項(xiàng)目/參數(shù)檢測標(biāo)準(zhǔn)（方法）及編號（含年號）限制范圍說明序號名稱64-+4005AVD67制比KSVR8+409電流IOH-電流IOL-71GB/T17007-19972漏電流IGES檢測對象項(xiàng)目/參數(shù)檢測標(biāo)準(zhǔn)（方法）及編號（含年號）限制范圍說明序號名稱73GB/T17007-1997481VFGJB128A-V2IRV9121GJB360B-1檢測對象項(xiàng)目/參數(shù)檢測標(biāo)準(zhǔn)（方法）及編號（含年號）限制范圍說明序號名稱2品質(zhì)因數(shù)GJB360B-31GJB548B--2C134561壓管GJB128A-率2（晶體管檢測對象項(xiàng)目/參數(shù)檢測標(biāo)準(zhǔn)（方法）及編號（含年號）限制范圍說明序號名稱3GJB128A-C45H16400g度1GJB360B--23400g度4檢測對象項(xiàng)目/參數(shù)檢測標(biāo)準(zhǔn)（方法）及編號（含年號）限制范圍說明序號名稱1V2345GJB599A-1 4027A-8~502驗(yàn)條件CD、38~50418~502倍檢測對象項(xiàng)目/參數(shù)檢測標(biāo)準(zhǔn)（方法）及編號（含年號）限制范圍說明序號名稱3 4027A-倍1分析方 GJB4027A-8~502驗(yàn)條件CD、38~5018~502X3驗(yàn)條件CD、48~50518~50218~502X檢測對象項(xiàng)目/參數(shù)檢測標(biāo)準(zhǔn)（方法）及編號（含年號）限制范圍說明序號名稱3分析方 GJB4027A-4倍561GJB4027A-20068~502X3檢測對象項(xiàng)目/參數(shù)檢測標(biāo)準(zhǔn)（方法）及編號（含年號）限制范圍說明序號名稱4GJB4027A-20068~50518~502X345倍6檢測對象項(xiàng)目/參數(shù)檢測標(biāo)準(zhǔn)（方法）及編號（含年號）限制范圍說明序號名稱7GJB4027A-20061分析方 GJB4027A-8~50234倍561 4027A-8~50檢測對象項(xiàng)目/參數(shù)檢測標(biāo)準(zhǔn)（方法）及編號（含年號）限制范圍說明序號名稱2X 34倍51分析方 GJB4027A-8~50234倍檢測對象項(xiàng)目/參數(shù)檢測標(biāo)準(zhǔn)（方法）及編號（含年號）限制范圍說明序號名稱5分析方 GJB4027A-6ISO/IEC17025ISO/IEC17025No.CNASNo.CNAS第53頁共NUMPAGES69ShouldtherebeanyinconsistenciesbetweenChineseandEnglishversionsofthescopeofaccreditation,theChineseversionshallprevailinthattheEnglishversionisprovidedbytheconformityassessmentbodyandisforreferenceonly.CHINANATIONALACCREDITATIONSERVICEFORCONFORMITYASSESSMENTAPPENDIXOFACCREDITATIONCERTIFICATE(RegistrationNo.CNASNAME:XianXiguMicroelectronicsCo.,Ltd.ComponentTestingCenterADDRESS:Room10402,Building2,ModernBusinessCenter,No.12,SectionA,ChuangyeYanfaPark,No.69,JinyeRoad,High-TechZone,Xian,Shaanxi,ChinaAccreditationCriteria:ISO/IEC17025andrelevantrequirementsofDateofIssue:2013-10-22 DateofExpiry:2016-10-21DateofUpdate：2015-01-13APPENDIX2ACCREDITED№TestTitle,CodeofStandardorMethod№integratedcircuitsGeneralprinciplesofmeasuringmethodsforCMOS1High-OnlyCMOScircuits21-LevelintegratedOnly3-h-Level№TestTitle,CodeofStandardorMethod№4-Level5OutputHighCurrent6OutputintegratedCMOScircuitsCurrentGeneralOnly1High-of-integrated7nceOutputHigh-methodsforHigh-8nceLow-9CurrentGeneralofTTLcircuitsmethodsof2integrated1InputClampVoltagecircuitsOnlyintegrated№TestTitle,CodeofStandardorMethod№2High-Only3Low-GeneralTTLcircuits4ofmethodsof2circuitsintegratedintegrated5High-Only-2006High-7Current8№TestTitle,CodeofStandardorMethod№High-9nceOutputHigh-Only-200High-nceGeneralLow-ofTTLcircuitsmethodsof2circuitsintegratedCurrentICCintegratedPowerOnly-LevelGeneralof3MOSrandomaccessmemoryofintegrated1h-LevelVOHmethodsofMOSrandomaccessmemoryforOnlyforintegrated№TestTitle,CodeofStandardorMethod№2GeneralprinciplesofmeasuringmethodsofMOSrandomaccessmemoryforintegratedcircuitsOnlyfor-Level3Current3MOSrandomaccessmemoryof4nceOutputOnly-200integratedHigh-nce5Low-6CurrentOnly7Current8BBPinCurrent№TestTitle,CodeofStandardorMethod№9CurrentGeneralofMOSmethodsof3accessmemoryrandommemoryOnlyintegratedCurrentICCSintegratedcircuitsBBPinCurrent1integratedcircuitsfor-voltageGeneral4ofofintegrated2methodsoffor-3for-№TestTitle,CodeofStandardorMethod№4voltageregulatorof4CurrentIQ、ChangeIQ(V)、integratedcircuitsGeneralprinciplesofmeasuringintegratedmethodsof5Voltagefor-VOnly1VoltageVIO-20mV~-VVGeneralOnlyfor-~-Aofmethods5e)amplifiers2CurrentIIOamplifiersintegratedintegrated3InputBiasCurrent45lVoltageOnlyGaindB№TestTitle,CodeofStandardorMethod№6RatioGeneralprinciplesofmeasuringOnlyfor62dBmethods5e)amplifiersofintegrated7RatioKSVRamplifiersforintegrated8Onlyfor-Swing +40CurrentIOS9Only6comparatorsof1VoltageVIO Generalprinciplesofmeasuring-20mV~-VVmethodsforOnly2CurrentIIO-~-A№TestTitle,CodeofStandardorMethod№Only3InputBiasCurrent-~-A4for-5lVoltageGainAVD comparatorsGeneral66RatioKCMRofmeasuringmethodsforvoltageOnlyfor62dB7Ratio8High-Onlyfor- +409Low-№TestTitle,CodeofStandardorMethod№6comparatorsofOutputHighCurrent Generalprinciplesofmeasuringmethodsforvoltagefor-OutputLowCurrentSelectPinCurrentISTfor-7bipolartransistor1rThresholdMeasuringmethodsforinsulated-gatebipolartransistorOnlyfor2CurrentOnlyfor3CurrentICESOnlyfor0mA4Onlyfor№TestTitle,CodeofStandardorMethod№81Voltage（VF）TestmethodsofdiscretedevicesOnlyforIF≦+40A2LeakageOnlyforVR91OnlyforVCE2DrainToOnlyforVDS1TestmethodsforelectronicandelectricalcomponentOnlyfor1TestmethodsforelectronicandelectricalcomponentOnlyfor2Onlyfor9№TestTitle,CodeofStandardorMethod№3TestmethodsforelectronicandelectricalcomponentOnlyforV≦1TestmethodsandproceduresforOnlyfor-2Onlyfor3PINDOnlyfor45BURN-IN6nBakeOnlyforTAdiscrete1BURN-TestmethodsofdiscretedevicesOnlyfor2BURN-IN)№TestTitle,CodeofStandardorMethod№discrete3BURN-INLifeTestForPowerAndIGBTTestmethodsofdiscretedevicesOnlyforMETHODA、B、4(AirToAir)Onlyfor-5OnlyforMETHODC、6PINDOnlyforElectronicandcomponentparts1TestmethodsforelectronicandelectricalcomponentOnlyfor-2OnlyforMETHODC、№TestTitle,CodeofStandardorMethod№Electronicandcomponentparts3PINDTestmethodsforelectronicandelectricalcomponentOnlyfor4)OnlyforTA1TestmethodsforelectricalconectorsGJB1217-1991Onlyfor2Onlyfor3Onlyfor4Onlyfor5oftorqueighdensity,quickentresistant,generalspecificationgorGJB599A-Onlyfor№TestTitle,CodeofStandardorMethod№Fixedmetalfilm1MethodsofdestructivephysicalanalysisformilitarycomponentsGJBOnlyfor2dOnlyforOnlyforMETHODC、3Onlyfor4oftheOnlyforMultilayerceramic1MethodsofdestructivephysicalanalysisformilitaryGJB4027A-Onlyfor2Onlyfor3ofthe№TestTitle,CodeofStandardorMethod№Nonsolidtantalumcapacitor1MethodsofdestructivephysicalanalysisformilitarycomponentsGJBOnlyfor2OnlyforMETHODC、3OnlyforSolidelectroly-tetantalum1MethodsofdestructivephysicalanalysisformilitarycomponentsGJBOnlyfor2X-Onlyfor3OnlyforMETHODC、4Onlyfor№TestTitle,CodeofStandardorMethod№Solidelectroly-tetantalum5oftheMethodsofdestructivephysicalanalysisformilitarycompone