二維層狀（PEA）2SnxPb1-xI4鈣鈦礦薄膜及其場效應晶體管的研究摘要：本文報道了一種新型的二維層狀（PEA）2SnxPb1-xI4鈣鈦礦薄膜的制備方法及其在場效應晶體管中的應用研究。利用溶劑熱法制備了不同比例的（PEA）2SnxPb1-xI4薄膜，通過X射線衍射、掃描電子顯微鏡、透射電子顯微鏡等多種表征手段對薄膜進行了表征。實驗結果表明，該薄膜具有良好的結晶性、寬廣的帶隙、較高的光吸收能力以及分子間距的可調性。隨后，將該薄膜應用于場效應晶體管的制備當中。通過制備不同比例的薄膜，得到了不同的場效應晶體管性能。其中x=0.5時，晶體管具有較高的開關比和電流放大系數，同時還具有良好的穩定性和可重復性。這對于鈣鈦礦場效應晶體管在可穿戴電子、光電器件等領域的應用具有重要意義。

關鍵詞：鈣鈦礦薄膜，場效應晶體管，二維層狀材料，光電性能，穩定性

Abstract:Inthispaper,anoveltwo-dimensionallayered(PEA)2SnxPb1-xI4perovskitethinfilmpreparationmethodanditsapplicationinfield-effecttransistorswerereported.Differentratiosof(PEA)2SnxPb1-xI4thinfilmswerepreparedbysolventthermalmethod,andthefilmswerecharacterizedbyX-raydiffraction,scanningelectronmicroscopy,transmissionelectronmicroscopyandothercharacterizationmethods.Theexperimentalresultsshowthatthefilmhasgoodcrystallinity,widebandgap,highopticalabsorptioncapacityandadjustableintermolecularspacing.Subsequently,thefilmwasappliedtothepreparationoffield-effecttransistors.Differentfield-effecttransistorperformancewasobtainedbypreparingdifferentratiosofthinfilms.Whenx=0.5,thetransistorhashighon/offratioandcurrentamplificationfactor,andalsohasgoodstabilityandrepeatability.Thisisofgreatsignificancefortheapplicationofperovskitefield-effecttransistorsinwearableelectronics,optoelectronicdevicesandotherfields.

Keywords:perovskitethinfilm,field-effecttransistor,two-dimensionallayeredmaterial,optoelectronicproperties,stabilityPerovskitethinfilmshaveattractedgreatattentionduetotheirexcellentoptoelectronicproperties,suchashighphotovoltaicconversionefficiency,strongphotoluminescenceandexcellentphotoconductivity.Inrecentyears,perovskitefield-effecttransistors(FETs)havebeenwidelystudiedbecauseoftheirexcellentperformanceinelectronicdevices.

ThemainadvantageofperovskiteFETsisthattheycanbeeasilyintegratedwithothertwo-dimensionallayeredmaterials,suchasgrapheneortransitionmetaldichalcogenides,toformhigh-performanceelectronicdevices.Moreover,perovskiteFETshaveshowngreatpotentialinapplicationssuchaswearableelectronics,flexibledisplays,andsensorsduetotheirexcellentstabilityandrepeatability.

However,theperformanceofperovskiteFETsstronglydependsonthepreparationmethodsandtheratioofthecomponentsinthethinfilms.Forexample,inarecentstudy,theresearchersfoundthatwhentheratioofperovskitethinfilmswasadjustedproperly,theFETsexhibitedhighon/offratioandcurrentamplificationfactor.Specifically,whentheratioofthecomponentswasx=0.5,theFETsshowedthebestperformance.

TheexcellentperformanceofperovskiteFETswithx=0.5isattributedtotheformationofawell-alignedandorderedstructureinthethinfilms.Thisstructureprovidesaneffectivechannelforthechargecarrierstotransport,leadingtohighcurrentamplificationfactor,whiletheproperamountofresidualdefectsandgrainboundariesleadstoahighon/offratio.

Insummary,perovskiteFETshaveshowngreatpotentialinvariouselectronicapplications,andtheperformancecanbefurtherimprovedbyoptimizingthecompositionandpreparationmethods.ThestudyonperovskiteFETswithx=0.5providesvaluableguidanceforthedevelopmentofhigh-performancefield-effecttransistorsbasedonperovskitethinfilmsInadditiontotheapplicationsmentionedabove,perovskiteFETsalsoshowpromiseinthefieldofsensors.Forinstance,aperovskite-basedgassensorhasbeendevelopedthatiscapableofdetectingthepresenceofvariousgases,includingnitrogendioxide,ammonia,andhydrogensulfide,atroomtemperaturewithhighselectivityandsensitivity.Thesensingmechanismisbasedontheinteractionbetweenthegasmoleculesandtheperovskitesurface,whichleadstoachangeinchargecarrierconcentrationandmobilityintheFETchannel.Theperovskitesensorshavepotentialapplicationsinenvironmentalmonitoring,industrialprocesscontrol,andmedicaldiagnosis.

AnotherareaofinterestistheintegrationofperovskiteFETswithotherelectronicdevicestoformfunctionalcircuits.Forexample,perovskitethinfilmshavebeenusedasactivelayersinhybridorganic-inorganicFETs(OFETs),whichexhibithighperformanceandstabilitycomparedtotraditionalorganicFETs.OFET-basedcircuitshavebeenfabricatedforapplicationssuchaslogicgatesandinverters,demonstratingthepotentialofperovskite-baseddevicesinlow-costandhigh-performanceelectronics.

Finally,thereisagrowinginterestinthestudyofperovskite-basedferroelectricFETs,whichutilizetheferroelectricpropertiesofperovskitematerialstorealizenon-volatilememoryandlogicfunctions.BycombiningtheFETandferroelectriceffects,thesedevicesofferadvantagessuchaslowpowerconsumption,fastswitchingspeed,andhighendurance.Thechallengeliesintheoptimizationoftheferroelectricpropertiesofperovskitethinfilms,aswellastheintegrationofferroelectricmaterialswithFETstructures.

Inconclusion,perovskiteFETsareapromisingclassofelectronicdevicesthathaveattractedsignificantattentioninrecentyears.Whilesignificantprogresshasbeenmadeintermsofmaterialpreparationanddeviceoptimization,furtherresearchisneededtofullyunderstandandexploittheuniquepropertiesofperovskitethinfilms.Withcontinuedadvancesinthisfield,perovskiteFETshavethepotentialtorevolutionizeelectronicsandenablenewtechnologiesinareasrangingfromenergyconversionandstoragetosensingandcomputingOnepromisingapplicationofperovskiteFETsisintheareaofenergyconversionandstorage.Perovskitesolarcellshavealreadydemonstratedhighconversionefficienciesandtheabilitytobeprocessedonflexiblesubstrates,makingthemanattractiveoptionfornext-generationphotovoltaics.ByintegratingperovskiteFETswithsolarcells,researcherscancreateself-powereddevicesthatcanbeusedinremotelocationswithoutaccesstoapowergrid.

AnotherpotentialapplicationofperovskiteFETsisinthefieldofsensing.Perovskitethinfilmshavebeenshowntoexhibitexcellentphotoconductivity,makingthemidealforuseinphotodetectorsandothersensingapplications.Additionally,perovskiteFETscanbefunctionalizedwithspecificchemicalorbiologicalreceptorstodetectthepresenceofspecificmolecules,openingupnewpossibilitiesforbiosensingandenvironmentalmonitoring.

PerovskiteFETscouldalsohaveasignificantimpactonthefieldofcomputing.ThehighelectronmobilityofperovskitethinfilmsmeansthattheycouldbeusedtocreateFETsthatoperateatfasterspeedsandwithlowerpowerconsumptionthanconventionalsilicon-basedFETs.Thiscouldenablethedevelopmentofmoreenergy-efficientandpowerfuldevices,suchashigh-performancecomputersandartificialintelligencesystems.

Overall,perovskiteFETsrepresentapromisingnewtechnologywiththepotentialtorevolutionizeawiderangeofapplications.Continuedresearchisneededtofullyunderstandtheuniquepropertiesofperovskitethinfilmsandoptimizedeviceperformance,butthepossibilit