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教材中文版周潤德等譯，數(shù)字集成電路設(shè)計透視第二版，電子工業(yè)出版社(JanM.Rabaey,etal.DigitalIntegratedCircuits,2nde,PrenticeHall,2004)參考書Sung-Mo(Steve)Kang,YusufLeblebici,CMOSDigitalIntegratedCircuitsAnalysis&Design,3rdEdition,McGraw-Hill2003R.JacobBaker,CMOSCircuitDesign,Layout,andsimulation,3rdEdition,Wiley,2010韓雁，集成電路設(shè)計CAD/EDA工具實(shí)用教程，機(jī)械工業(yè)出版社，20102023/2/67幾個常見縮略詞CMOS(complementarymetaloxidesemiconductor)IC(integratedcircuit)VLSI(verylargescaleintegrated)ULSI(ultra-largescaleintegrated)MOSFET(metaloxidesemiconductorfieldeffecttransistors)SPICE(simulationprogramwithintegratedcircuitemphasis)2023/2/69認(rèn)識集成電路和集成電路設(shè)計為什么需要集成電路？與以前的集成電路設(shè)計相比，為什么現(xiàn)在的集成電路設(shè)計出現(xiàn)了不同以及現(xiàn)在的集成電路設(shè)計遇到了哪些新的挑戰(zhàn)？未來，集成電路將如何發(fā)展？2023/2/610為什么需要集成電路?Integrationreducesdevicesize（減小尺寸）Laptop,iPod,mp3,cellphone,...Integrationimprovesthedesign（提高性能）higherspeed;lowerpowerconsuption;morereliable.Integrationreducesmanufacturingcost（降低成本）BOM(BoardofMaterials)costreducesMassICproductionreducescost2023/2/611Moore’sLaw(1965)GordonMoore–IntelFounder“Thenumberoftransistorsonachipdoubledevery18to24months.”Electronics,April19,1965.GordonMooreIntelCo-FounderandChairmainEmeritusImagesource:IntelCorporation2023/2/613InformationRevolutionElectronicsystemincars.Electronicfinancialsystem:e-banking,e-money,e-stock,RFIDlablePersonalcomputing/entertainmentMedicalelectronicsystems.Internet:routers,firewalls,servers,storagesElectroniclibrary(Google,...)DVDR/W,HDTV,InteractiveTVIngeneral,consumerelectronicsetc...2023/2/614ChallengesofICDesignComplexity:Multi-milliontransistorsonasinglechip(smallersize/fasterspeed)Multipleandconflictingspecificationsforhighperformance(power/speed/throughput)Competition:ShortdesigntimeDesignTools:Multipletoolsinvolved,ComplexdesignflowAnalogBasebandDigitalBaseband(DSP+MCU)PowerManagementSmallSignalRFPowerRF2023/2/6152023/2/617TheTransistorRevolutionFirsttransistorBellLabs,1947J.Bardeen,W.Shockley,andW.Brattain(1956NobelprizeLaureate)2023/2/6181958年J.Kilby（TI）研制成功第一個集成電路1959年R.Noyce（Fairchild）第一個利用平面工藝制成集成電路TheFirstIntegratedCircuits2023/2/619

Intel4004Micro-Processor19702300transistors~1MHzoperation2023/2/621IntelPentium(IV)microprocessorPentium?4“Northwood”CommercialProduction:Year2001L=0.13μm6MLCuLow-kFC-PGA22023/2/622MOSFETTechnologyMOSFETtransistor-Lilienfeld(Canada)in1925andHeil(England)in1935CMOS–1960’s,butplaguedwithmanufacturingproblems(usedinwatchesduetotheirpowerlimitations)PMOSin1960’s(calculators)NMOSin1970’s(4004,8080)–forspeedCMOSin1980’s–preferredMOSFETtechnologybecauseofpowerbenefitsBiCMOS,Gallium-Arsenide,Silicon-GermaniumSOI,Copper-LowK,strainedsilicon,High-kgateoxide...2023/2/6231’’Waferin1964vs.300mm(12”)Waferin20032023/2/625IBMPowerPC970(130nm)20031.8Ghz58M118mm2ApplePowerG5,thefastestPCin2003,hasdualPPC970CPU2023/2/626TwochipsyouareseeingtodayMicroprocessorASIC(ApplicationSpecificIC)2023/2/627State-of-theArt:LeadMicroprocessors(uptodate)

Pentium4180nm(2001)1.7GHz42Mtransistors217mm2Pentium4130nm(2003)3.2GHz55MTransistors131mm2Pentium490nm(2004)3.4Hz125MTransistors112mm2Pentiumon65nm(2005/2006)250Million

Pentiumon45nm(2007)400to500Million(Alluse0.13umtechnologyexceptPentium4–Prescott,whichuses90nmtech)2023/2/629State-of-theArt:LeadMicroprocessors(uptodate)300mmwaferandPentium4IC.PhotoscourtesyofIntel.2023/2/630WhatADigitalDesignerNeedstoKnow...

“MicroscopicProblems”?Ultra-highspeeddesignInterconnect?Noise,Crosstalk?Reliability,Manufacturability?PowerDissipation?Clockdistribution.

“MacroscopicIssues”?Time-to-Market?MillionsofGates?High-LevelAbstractions?Reuse&IPAvailability?systemsonachip(SoC)

?Predictability?etc.2023/2/6312023/2/6322023/2/6332023/2/6342023/2/6352023/2/6362023/2/6372023/2/638>95%2023/2/639如何設(shè)計一個集成電路？2023/2/6402023/2/641TheVLSIdesignprocess工程的藝術(shù)Maybepartoflargerproductdesign.Majorlevelsofabstraction:specificationarchitecturelogicdesigncircuitdesignlayoutdesign2023/2/642MajorSegmentsofICIndustryFablessDesignHousesEDAToolsCompaniesDesignServiceCompaniesLibrary&IPProvidersDedicatedICManufacturers(Foundry)Post:EDA:ElectronicDesignAutomationIP:siliconIntellectualPropertyIDM:IntegratedDeviceManufacturerIntegratedservicePackaging&TestingHouses2023/2/643ASICDesignStylesFullCustomDesignFlowCircuitiscreatedbycomposingatransistornetlistSPICEsimulationisperformedtoverifythecircuitKnownas“capture-and-simulate”paradigmLayoutismostlydonemanuallyPopularforhigh-performancemicroprocessors&memoriesCell-BasedSynthesisFlowDesignisfirstdescribedbyHardwareDescriptionLanguage(e.g.,VerilogandVHDL)Basedonacelllibrary,netlistiscreatedbysynthesistoolsKnownas“describe-and-synthesize”paradigmLayoutcanbedonethroughautomatictools2023/2/644DetailedCustomDesignFlowBlockSpecification(FiniteStateMachine,ArithmeticExpression,BooleanExpression)LogicDesignGate-LevelNetlistTransistorNetlistTechnologyMappingSPICESimulationSPICEModelLayoutDesignLayoutLayoutRulesDesignRuleChecking(DRC)Layoutvs.SchematicCheck(LVS)Parasitic(orwiring)RCextractionPost-LayoutSPICESimulationCheckifSPECismet?Ifyes,done.Otherwise,gobacktooptimizethedesign2023/2/645ASimpleExample FunctionalityOne-bitbinaryfull-adderTechnology1mmn-wellCMOStechnologySpeedInputtooutputdelay<5nsArea<3000mm2PowerDissipation<1mWat5voltsand200MHzFull-adderABSumCarry_outSum=A⊕B⊕C=ABC+ABC+ABC+ACBCarry_out=AB+BC+CA(majorityfunction)BooleanDescriptionC2023/2/646LogicDesignLogicminimizationtrick:Thecarry_outsignalisusedtorealizethefunctionofsignalsum

inordertoreducetheoverallcircuitsize.Today’slogicsynthesistools(suchasDesignCompiler)incorporatingsomeadvancedalgorithms,isabletoperformautomaticlogicminimization.x=Carry_out#of‘1’sInA,B,C

Carry_out

Sum012300110101(A+B+C)x=>exactlyoneofA,B,Cis‘1’2023/2/647Transistor-LevelSchematicTechnologymappingManysimpleANDORgatesaremergedintoacomplexgate(oracellinthecelllibrary)TransistoraspectratiopMOS(W/L)isusuallylargerthannMOS(W/L),e.g.,2:1xyxyx=(AB+BC+CA)y=(A+B+C)x+ABC)2023/2/648InitialLayoutPost-layoutSPICEsimulationincludesthe“parasiticresistance&capacitance”ismoreaccuratethanthepre-layoutsimulation(pre-sim)Ratioofchannelwidths2:12023/2/649I/OSimulationWaveformsPropagationtimetPHLortPLHasdefinedaboveLow-to-highpropagationtime（傳播延時）tPLH=8.2ns!

Gottogobacktooptimizethedesign!!!C(Carry_in)Sum2023/2/650OptimizedLayoutTransistorSizingchangestheaspectratios

(W/L)ofselectedtransistorsAlargeraspectratiomayleadtoahigherspeedWireSizingisalsomorerecentlyproposedPropagationDelay<5ns!2023/2/651FullCustomDesignExample（another)A/DPLAI/OcompRAMMetal1ViaMetal2I/OPadRandomlogic(standardcelldesign)2023/2/652Cell-BasedDesignFlowArchitecturedesignSystem-levelintegrationlayoutNoviolationMemorymoduleFunctionalmodelTestbenchRTLcoding&simulationRTLcodeCellLibrarysynthesisviewRTL-synthesis(DesignCompiler)NetlistphysicalviewPlace&Route(Apollo)LayoutviolationPost-LayoutTimingCheck(DesignTime)SDFSDF:standarddelayformat2