1、January 12, 2001Mr. Jesse Huang,9999 Hamilton BlvdBreinigsville, PA 18031Dear Mr. Huang:We have analyzed the two wafers that you submitted late last month. The analysis was fairly routine, and our QuanX EDXRF system easily achieved the required precision. The report below details how the data were a

2、cquired and analyzed. Layer thickness at nine points on each wafer and precision measurements are also reported.I hope you will find these results helpful and indicative of the ability of the QuanX system to meet your needs and exceed your expectations. If I may be of additional assistance, please c

3、ontact me directly in the Redwood City office at 650.562.2538.Sincerely,Anton Kleyn,Applications Engineer硅晶園片上Ti/Au/Cr層厚度的測量Thermo NORAN 簡介: Thermo NORAN熒光能譜儀試驗室分析了兩個硅晶圓片上鍍層的厚度， 一個是Si上的Ti, 另外一個是 Si上的 Ti/Au/Cr. 分析方法是基本參數薄膜分析方法.儀器: QuanX PCD 系統, 美國熱電集團.樣品制備: 不需要樣品制備，直接分析。要注意樣品放置時的方向和角度 采譜條件：電壓(kV)電流(m

4、A)濾光片樣品室氣氛分析元素17自動Aluminum空氣Cr, Ti27*自動Pd thick空氣Au此條件僅用于晶片Cr/Au/Ti 譜處理: 用擬合法XML提取凈峰強度 。 分析技術: 使用半無標樣基本參數法（FP） · 基體校正 · 使用與樣品成分不同的標樣 · 使用純元素為標樣直接對未知樣品進行分析 這種方法對那些找不到相應標樣的用戶是特別有用的。 分析結果晶圓片分析按照右圖所示選擇 10 點進行分析. 圖1和2 是 Cr/Au/Ti 和 Ti 結果.晶圓片上的測試點 測量精密度：Table 1Ti / Au / Cr / SiTi / SiTiCrAuT

5、iAcquire Time100 s200 sMeas. 1440.4141.4317.0664.02441.1140.3316.9668.93445.1141.3314.9665.84443.3141.3316.9667.85444.9141.0314.5668.76442.0141.9318.8670.07442.4141.2316.6669.88441.3140.6318.4670.79442.7140.5316.7669.810444.0140.6316.0668.911440.7141.9319.2669.312444.7141.9313.6668.013442.9141.2314.8670.414442.0141.2315.9669.815445.6141.6315.4668.216441.8141.4315.7668.917443.1140.3316.9669.818441.8142.1314.1669.619440.9140.2316.8670.020440.9141.9317.0668.9平均值 (A)442.6141.2316.3668.9標準偏差.1.590.601.501.59RSD (%)0.360.430.470.24測得的精密度超過了要求至少兩倍。若精密度要求不需要這