微專業(yè)---半導(dǎo)體制造技術(shù)課程：半導(dǎo)體工程專業(yè)英語ContentsSemiconductorProperties半導(dǎo)體特性01SemiconductorMaterials半導(dǎo)體材料02SemiconductorDeviceandHowTheyareUsed半導(dǎo)體器件及其使用03ProcessTechnology工藝技術(shù)04FabricationProcesses制造工藝05SemiconductorMaterialsandProcessCharacterization半導(dǎo)體材料與工藝表征06FabricationProcesses5.1PatternDefinitionSchemes5.2ProcessingStepsinTop-DownSequence5.3SurfaceProcessing5.4AdditiveProcesses5.5Lithography5.6SubtractiveProcesses5.7SelectiveDoping5.8ProcessingofContactsandInterconnects5.9AssemblyandPackaging055FabricationProcesses1ChapterOverview

Followinggeneralintroductiontosemiconductorprocesstechnologyin

Chapter4,thischapterisreviewingspecificmethodsusedtomodifysemiconductormaterialinsuchwaythatthefinalproductisafunctionalsemiconductordevice.Thediscussionisbasedonthefabricationprocedures

involvingsiliconwaferswhichareusedhereasarepresentationofthemethodsandprocessesemployedinmainstreamsemiconductordevicemanufacturingtechnology./?mɑ?d?fa?/使改形2Introduction

Thekeyelementinthesemiconductorengineeringprocess,whichaimsat

thefabricationofthefunctionalsemiconductordevices,isacreationofan

intricatepatterninvolvingnear-surfaceregionoftheprocessedsubstrate

andvariousthin-filmmaterialsdepositedonthesurface.Dependingon

thetypeofsubstrateused(forinstancerigidwaferorflexiblefoil),and

materialscomprisingadevice(forinstancesingle-crystalsiliconororganic

semiconductor),appropriatetotheneedspatterndefinitionschemefrom

amongthoseconsideredbelowisimplemented./ski?m/方式5.1PatternDefinitionSchemes/?r?d??d/剛性/??ntr?k?t/錯綜復(fù)雜的5FabricationProcesses/f??l/箔3

Theessenceofthetop-downsequenceisthatthethin-filmtobepatternedis

depositedontheentiresubstrate(blanketdeposition)first,andthepatterningprocessfollows.Insimplifiedtermsatop-downprocesscanbeexplained

asfollows.Thefirststepinthesequenceisdepositionofthethin-filmofthematerialtobepatterned(Fig(a))usingoneamongseveralthin-filmdepositiontechniquesdiscussedlaterinthischapter.Oncedeposited,thefilmtobepatternediscoatedwithathinlayerofthephotosensitivematerialknownasphotoresist(Fig(b)).5.1PatternDefinitionSchemes/?fo?to??sens?t?v/光敏的5FabricationProcesses5.1.1

Top-downprocessText均厚4

Subsequently,photoresistisselectivelyilluminatedthroughthemaskcomprisedofthetransparenttoUVlightparts,andnontransparentopaquepartsblockingoffUVlight(Fig(c)).Theopaqueandtransparentpartscorrespondtothepatterntobecreatedinthelayerofphotoresist.FollowingUVexposure,waferisimmersedinthesolutionknownasadeveloperwhichdissolvespartsofphotoresistwhichwereexposedtoUVlight.Atthispointdesiredpatternistransferredtothesubstratewafer,butfornowiscreatedinthepatterntransferlayerofphotoresist,andnotyetinthethin-filmunderneath(Fig(d))./??lu?m?ne?t?d/照射5.1PatternDefinitionSchemes/o??pe?k/不透明的/tr?ns?p?r?nt/透明的5FabricationProcesses5.1.1

Top-downprocess/d??zɑ?lv/解散/??m??rst/浸入的5

Toaccomplishthelatter,waferissubjectedtotheetchingprocessusingchemistrieswhichremovematerialinopenspaceswhilenotattackingphotoresist.Theprocessiscompletedwithphotoresiststrippingoperationandcleaning(Fig(f)).Uponcompletionofthetop-downpatterningsequence,waferisreadyforfurtherprocessing./?k?m?striz/化學(xué)5.1PatternDefinitionSchemes/?str?p??/剝離經(jīng)受5FabricationProcesses5.1.1

Top-downprocess/?si?kw?ns/工序65.1PatternDefinitionSchemes/?fleks??b?l?ti/靈活性/?me??k?p/組成5FabricationProcesses5.1.1

Top-downprocessTextProcessingstepscreatingpatternsonthesurfaceofsemiconductorwafer

intheconventionaltop-downsequence.7

Therearematerialswhichcannotbepatternedusingtop-downsequencebecauseofstructuralfragilityorsolubilityinprocesschemicalsinvolvedinthe

patterningprocessrenderingthemincompatiblewithphotoresistprocessing

andetchingoperations.Insuchcasesanalternativebottom-uppatterning

sequenceisemployed.

Thefundamentaldifferencebetweentop-downandbottom-upprocessesis

thatintheformercasepatterningstepisperformedonthefilmdepositedon

thesurfaceofthewaferwhileinthelatter,patterningsteplocallychanging

chemicalmakeupofthesurfaceiscarriedoutfirst,andthenthematerialisgrownfollowingpatterncreatedonthesurface./fr??d??l?ti/脆弱5.1PatternDefinitionSchemes/?sɑ?lju?b?l?ti/溶解性/?rend?r??/使成為5FabricationProcesses5.1.2

Bottom-upprocessText85.1PatternDefinitionSchemes5FabricationProcesses5.1.2

Bottom-upprocessProcessingstepscreatingpatternsusingbottom-upsequence,(a)surfacefunctionalization,(b)patterning,chemicalfunctionalgroupremainsinselected

areas,and(c)bottom-upgrowthofthematerialfollowingpatternestablishedduring

step(b)./f??k??n?l??ze???n/功能化9

Thelift-offisusedwithmaterialswhichbecauseofitsresistancetoetching,forinstancegold,cannotbepatternedfollowingconventionaltop-downprocedure.Inthelift-offsequencethenegativeimageofthedesiredpatternisfirstdefinedinthelayerofphotoresistdepositedonthesurface(Fig(a)).Then,thethin-filmofgoldtobepatternedisblanketdepositedonthesurfaceofthewaferasshowninFig(b).Thepatternistransferredtothelayerofgoldbydissolvingphotoresistintheorganicsolventandremovinggoldinthepartswhereitwascoveringphotoresistandestablishingthedesiredpatterninthethin-filmgoldremainingonthesurfaceasaresult(Fig(c)).5.1PatternDefinitionSchemes/?sɑ?lv?nt/溶劑5FabricationProcesses5.1.3

Lift-offpatterningText10Schematicillustrationofthelift-offprocess,(a)depositionandpatterning

ofphotoresist,(b)depositionofthefilmtobepatterned,and(c)dissolutionof

photoresistresultinginthematerialontopofthephotoresisttobelifted-off.5.1PatternDefinitionSchemes/?fleks??b?l?ti/靈活性/?me??k?p/組成5FabricationProcesses5.1.3

Lift-offpatterning11

Theuseofmechanicalmasks,alsoknownasshadowmasks,iscompatibleonlywithselecteddepositiontechniquesdiscussedlaterinthischapter.

Duetotheresolutionofpatterndefinitionusingshadowmaskslimitedto

micrometerregimeanddifficultieswithprecisealignmentofmulti-layerpatternsdefinedusingthistechnique,mechanicalmaskpatterndefinitionis

rarelyusedinmassindustrialmanufacturingofsemiconductordevices.On

theotherhand,however,thispatterningmodeisoftenexploitedinresearch

anddevelopmentlaboratories,aswellasinsmallscaleproduction,taking

advantageofthelowcostofthemasksandoverallsimplicityoftheprocess./s?m?pl?s?ti/簡單5.1PatternDefinitionSchemes/re???i?m/范圍/??la?nm?nt/對準(zhǔn)5FabricationProcesses5.1.4

MechanicalmaskText12Thin-filmpatterningusingmechanicalmask,(a)maskisblockingdepositioninselectedareas,(b)depositedmaterialpatternedusingmechanicalmask.5.1PatternDefinitionSchemes/?fleks??b?l?ti/靈活性/?me??k?p/組成5FabricationProcesses5.1.4

Mechanicalmask13

Invariousformsandshapesitbeenextendedtoarangeofmanufacturingprocessesincludingfabricationofsemiconductorstructures.In

contrasttotypicaltop-downandbottom-upprocesses,inthecaseofprintingandstampingoperationsofdepositionandpatterningoccurmostlysimultaneously.Insemiconductormanufacturing3Dprintingisusedforinstancetoprintpackageshousingintegratedcircuitschips,orelementsofMEMSdevices,butisnotbroadlyusedintheformationofnanoscalepatternsuponwhichmanufactureofadvancedsemiconductordevicesandcircuitsisbased.5.1PatternDefinitionSchemes/?st?mp??/印章轉(zhuǎn)移/?sa?m(?)l?te?ni?sli/同時地5FabricationProcesses5.1.5

PrintingandstampingText14IntroductionThefollowingkeytypesofoperationsperformedonthewafer

inthecommonlyemployedtop-downmanufacturingsequenceareidentified

below.?Surfaceprocessingincludingsurfacecleaning.?Thin-filmdepositionwhichisapartofthebroadlydefinedadditive

processes.?Patterndefinitionusingmethodsoflithography.?Subtractiveprocesseswhichareusedtoremovematerialbyetching.?Selectivedopinginthecourseofwhichdopantatomsareintroduced

intosemiconductormaterial.?Processingofcontactsandinterconnectsincludingmethodsofsurfaceplanarization.?Assemblyandpackagingwhichconvertdeviceexistingasapartof

thesubstratewaferintodevicewhichcanbeusedasapartofthe

electroniccircuit.5.2ProcessingStepsinTop-DownSequence/??d?t?v/增材5FabricationProcesses15Introduction

Thissectionconsidersselectedkeyissuesrelatedtosurfaceprocessing

technologyinsemiconductormanufacturing.First,surfacecleaningprocessesareconsidered.Then,meritsandimplementationofoperationsreferredtoassurfaceconditioningarediscussed./??mpl?ment?d/實現(xiàn)5.3SurfaceProcessing/k?n?d???n??/處理/?mer?ts/優(yōu)點5FabricationProcesses16

Surfacecleaningistheprocessaimedattheremovalofsolids,nonvolatile

contaminantssuchasparticlesormetallicimpuritiesfromthe

surfacewithoutuncontrolledalterationsofitscharacteristics./n?n?v?l?ta?l/非揮發(fā)性的/???lt??re??(?)n/改變5FabricationProcesses5.3.1

SurfacecleaningText5.3SurfaceProcessingImplementationofthesurfacecleaningprocesses./k?n?t?m?n?nt/污染物17WetcleaningDuringthemostcommonlyusedinsemiconductorfabricationwetcleaningoperations,contaminantsareremovedviaselective

chemicalreactionsintheliquid-phasewhichcauseseithertheirdissolution

inthesolvent,orconversionintothesolublecompounds./k?n?v??r?(?)n/轉(zhuǎn)變/?sɑ?lj?b(?)l/可溶的5FabricationProcesses5.3.1

Surfacecleaning5.3SurfaceProcessing18DryCleaningInthiscaseremovalofcontaminantfromthesurfacetakesplacevia

chemicalreactioninthegas-phaseconvertingitintoavolatilecompound

(Fig

(a)),orasaresultofmomentumtransferbetweenspeciesimpinging

onthesurfaceandsurfacecontaminants(Fig

(c)),orasaresultofsurface

irradiation(IR-heating,UV-bondbreaking/oxidation)sufficienttoovercome

forcescausingvolatilecontaminanttoadheretothesurface(Fig

(d)).

/mo??ment?m/動能/?m?p?nd???/沖擊/?d?h?r/黏附5FabricationProcesses5.3.1

Surfacecleaning5.3SurfaceProcessing/??re?di?e??n/照射/s??f??(?)nt/足夠的19

Surfaceconditioningoperationscanbecarriedoutusingeitherwetordry

chemistriesaswellastoolsandmethodsusedinsurfacecleaningoperations.

Thegoalistoenforcesurfaceterminationassuringstable,timeandambient

resistant,aswellasreproduciblesurfacecharacteristics./?n?f??rs/強(qiáng)化/??mbi?nt/環(huán)境的/?ri?pr??du?s?bl/可重復(fù)的5FabricationProcesses5.3.2

SurfaceconditioningText5.3SurfaceProcessing(a)Siliconsurfaceasexposedtoambientair,(b)hydrogenterminatedSi

surface./?t??rm??ne??(?)n/鍵飽和20In-classexercisConnecttheEnglishwords/phrasesandChinesemeaningwithlines.dryprocesssurfacecleaninglift-offprocesssoft-lithographyetchingprocess表面清洗軟光刻刻蝕工藝剝離工藝干法工藝5FabricationProcesses21In-classexercisFillintheblankswithproperwordsorphrases.1.The

isusedwithmaterialswhichbecauseofitsresistancetoetching,forinstancegold,cannotbepatternedfollowingconventionaltop-downprocedure.

2.

istheprocessaimedattheremovalofsolids,nonvolatilecontaminantssuchasparticlesormetallicimpuritiesfromthe

surfacewithoutuncontrolledalterationsofitscharacteristics.5FabricationProcesses22單詞/短語音標(biāo)中文含義2D(two-dimensional)printing/da??men??n(?)l/2D印刷3D(three-dimensional)printing/da??men??n(?)l/3D打印additivemanufacturing/??d?t?v?m?nju?f?kt??r??

/增材制造additiveprocesses/??d?t?v?prɑ?ses?z

/增材工藝anisotropicetching/??na?s??trɑ?p?k?et???/各向異性刻蝕AtmosphericPressureCVD(APCVD)/??tm?s?f?r?k?pre??r/常壓化學(xué)氣相沉積AtomicLayerDeposition(ALD)/??tɑ?m?k?le??r?dep??z??n/原子層沉積back-end-of-the-line(BE-OL)/la?n/后道batchprocessing/b?t??prɑ?ses??

/批量工藝KeyTerms5FabricationProcesses23單詞/短語音標(biāo)中文含義blanketdeposition/?bl??k?t?dep??z??n/均厚沉積chemicaletching/?kem?k(?)l?et???/化學(xué)刻蝕chemicalinterface/?kem?k(?)l??nt?rfe?s/化學(xué)界面ChemicalVaporDeposition(CVD)/?ve?p?r?dep??z??n/化學(xué)氣相沉積Chemical-MechanicalPlanarization(CMP)/m??k?n?k(?)lpl?n?ra?'ze??n/化學(xué)機(jī)械拋光/平坦化computationallithography/?kɑ?mpju?te???nll??θɑ?ɡr?fi/計算光刻conformalcoating/k?n?f?rm?l?ko?t??/保形覆蓋contactprinting/?kɑ?nt?kt?pr?nt??/接觸式光刻criticaldimension(CD)/?kr?t?k(?)lda??men?n/關(guān)鍵尺寸5FabricationProcesses24單詞/短語音標(biāo)中文含義damasceneprocess/?d?m?sin?prɑ?ses/大馬士革工藝/鑲嵌工藝DeepReactiveIonEtching(DRIE)/ri??kt?v?a??n?et???/深反應(yīng)離子刻蝕diffusion-controlledprocess/d??fju??nk?n?tro?ld?prɑ?ses/擴(kuò)散控制過程directwritelithography/d??rektra?tl??θɑ?ɡr?fi/直寫光刻dopant,doping/?do?p?nt//?dop??/摻雜劑，摻雜dryprocess/?prɑ?ses/干法工藝e-beamevaporation/??v?p??re??(?)n/電子束蒸發(fā)e-beamlithography/l??θɑ?ɡr?fi/電子束光刻electrodeposition/??lektr???dep??z???n/電沉積electromigration/elektro?m?ɡ're??n/電遷移etchingprocess/?et????prɑ?ses/刻蝕工藝5FabricationProcesses25單詞/短語音標(biāo)中文含義evaporation/??v?p??re??(?)n/蒸發(fā)excimerlaser/?eks?m?r?le?z?r/準(zhǔn)分子激光front-end-of-theline(FEOL)/la?n/前道full-fieldexposure/?k?spo???r/全域曝光heterogeneousintegration/?het?r??d?i?ni?s??nt??ɡre??(?)n/異質(zhì)集成High-PressureOxidation(HIPOX)/?ɑ?ks??de??n/高壓氧化hydrogentermination/?ha?dr?d??n?t??rm??ne??(?)n/氫終止hydrophilicsurface/?ha?dr??f?l?k?s??rf?s/親水表面hydrophobicsurface/?ha?dr??fo?b?k?s??rf?s/疏水表面immersionlithography/??m??r?nl??θɑ?ɡr?fi/浸沒式光刻InductivelyCoupledPlasma(ICP)/?n?d?kt?vli?k?pld?pl?zm?/電感耦合等離子體5FabricationProcesses26單詞/短語音標(biāo)中文含義interleveldielectric/?n?t?:(r)?lev(?)l?da???lektr?k/層間電介質(zhì)ionbeamsputtering/?a??nbi?m?sp?t?r??/離子束濺射ionimplantation/??mpl?n?te??n/離子注入ionmilling/?m?l??/離子銑削isotropicetching/?a?s??trɑ?p?k?et???/各向同性刻蝕lateraldiffusion/?l?t?r?ld??fju??n/橫向擴(kuò)散lift-offprocess/?l?ft??f/剝離工藝LowPressureCVD,LPCVD/?pre??r/低壓化學(xué)氣相沉積magnetronsputtering/?m?ɡn??tr?n/磁控濺射maskedlithography/l??θɑ?ɡr?fi/掩模光刻maskalignment/??la?nm?nt/掩模對齊5FabricationProcesses27單詞/短語音標(biāo)中文含義mechanicalmask/m??k?n?k(?)l/機(jī)械掩模megasonicagitation/meɡ?'s?n?k??d???te??(?)n/兆聲清洗metalorganiccompound/?met(?)l??r?ɡ?n?k?kɑ?mpa?nd/金屬有機(jī)化合物MetalorganicCVD,MOCVD/?met(?)l??r?ɡ?n?k/金屬有機(jī)物化學(xué)氣相沉積minimumfeaturesize/?m?n?m?m?fi?t??rsa?z/最小特征尺寸mistdeposition/m?st/噴霧沉積molecularbeam/m??lekj?l?r/分子束MolecularBeamEpitaxy(MBE)/?ep??t?ksi/分子束外延multipleprinting/?m?lt?p(?)l/多次曝光non-opticallithographies/?ɑ?pt?k(?)l/非光學(xué)光刻nonselectiveetching/?nɑ?ns??lekt?v/非選擇性刻蝕5FabricationProcesses28單詞/短語音標(biāo)中文含義patterntransferlayer/tr?ns?f??r/圖案轉(zhuǎn)移層photolithography/?fo?to?l??θɑ?ɡr?fi/光刻physicaletching/?et???/物理刻蝕physical/chemicaletching/?et???/物理/化學(xué)刻蝕PinGridArray(PGA)/ɡr?d/引腳網(wǎng)格陣列PlasmaEnhancedCVD(PECVD)/?n?h?nst/等離子體增強(qiáng)化學(xué)氣相沉積plasmaenhancement/?n?h?nsm?nt/等離子體增強(qiáng)plasmaetching/?et???/等離子刻蝕preferentialetching/?pref??ren?(?)l/優(yōu)先腐蝕proximityeffect/prɑ?k?s?m?ti/鄰近效應(yīng)proximityprinting/?pr?nt??/接近式光刻5FabricationProcesses295FabricationProcesses單詞/短語音標(biāo)中文含義RapidThermalOxidation(RTO)/?ɑ?ks??de??n/快速熱氧化ReactiveIonEtching(RIE)/ri??kt?v?a??n/反應(yīng)離子刻蝕reactivesputtering/?sp?t?r??/反應(yīng)濺射remoteplasma/r??mo?t/遠(yuǎn)程等離子體resolutionenhancingtechnique/?rez??lu??(?)n/分辨率增強(qiáng)技術(shù)selectivedoping/?dop??/選擇性摻雜selectiveetching/?et???/選擇性刻蝕Self-AssembledMonolayer(SAM)/??sembld?mɑ?no??le??r/自組裝單分子膜shadowmask/???do?/陰影掩模soft-lithography/s??ftl??θɑ?ɡr?fi/軟光刻spincoating/sp?n?ko?t??/旋涂30單詞/短語音標(biāo)中文含義sputterdeposition/?sp?t?r?dep??z??n/濺射沉積sputteretching/?sp?t?r??et???/濺射刻蝕step-and-repeatexposure/?k?spo???r/分步重復(fù)曝光structuralinterface/?str?kt??r?l??nt?rfe?s/結(jié)構(gòu)界面subtractiveprocesses/s?b?tr?kt?v?prɑ?ses?z/減材工藝supercriticalcleaning/?su?p?r?kr?t?k?l?kli?n??/超臨界清洗supercriticalfluid(SCF)/?su?p?r?kr?t?k?l?flu??d/

超臨界流體surfacecleaning/?kli?n??/表面清洗surfaceconditioning/k?n?d???n??/表面改性surfaceenergy/?s??rf?s?en?rd?i/表面能surfacefunctionalization/f??k??n?l??ze???n/表面功能化5FabricationProcesses31單詞/短語音標(biāo)中文含義surfacetension/?ten?(?)n/表面張力surfacetermination/?t??rm??ne??(?)n/表面鍵飽和thermaldecomposition/?di??kɑ?mp??z??n/熱分解thermalevaporation/??v?p??re??(?)n/熱蒸發(fā)thermaloxidation/?ɑ?ks??de??n/熱氧化Through-SiliconVia(TSV)/?s?l?k?n?va??/硅通孔top-downprocess/?prɑ?ses/自上而下工藝vapor-phaseetching/?ve?p?rfe?z?et???/蒸氣刻蝕wetprocess/wet?prɑ?ses/濕法工藝5FabricationProcesses1Introduction

Asindicatedonseveraloccasionsinthepreviouschapters,semiconductor

devicesincludemultilayerstructurescomprisedofvariousmaterials(semiconductors,insulators,metals)processedintheformofthinfilms.Referred

toasadditiveprocesses,arethosewhichaddmaterialintheformofthin-film

ontopofthesubstrateandwhereuponadequatepatterningandequipped

withelectricalcontacts,resultingmulti-layermaterialsystemactsafunctionalsemiconductordevice.Consideringtheroletheyarefulfilling,additive

processesareatthecoreofsemiconductordevicemanufacturingtechnology./f?l?f?l??/有意義的5.4AdditiveProcesses/??d?t?v/增材/??nd?ke?t?d/如文所述5FabricationProcesses2

Inthecaseofthemostversatileandthemostwidelyusedadditivetechniques,substratedoesnotparticipatechemicallyinthefilmformation,which

meansthatallthecomponentsofthedepositedfilmaresuppliedfromoutsideofthesubstratewafer.Insuchcasethedepositionprocessdoeslittle

toaltercharacteristicsofthesubstratewaferandtransitionfromthesubstratetothethin-filmisfeaturedbyabruptchangeofmaterialcomposition

attheinterface,orinotherwords,abruptchemicalinterface(Fig

(b)).

Ifthesubstrateandthin-filmmaterialsfeatureinadditiondifferentcrystallographicstructure,thematerialsystemformedfeaturesalsotheabrupt

structuralinterface./?v??rs?t(?)l/通用的5FabricationProcesses5.4.1

CharacteristicsofadditiveprocessesText5.4AdditiveProcesses/,kr?st?lɑ'ɡr?f?k/結(jié)晶的3/k?n?f?rm?l/保形的5FabricationProcesses5.4.1

Characteristicsofadditiveprocesses5.4AdditiveProcesses(a)Chemicalandstructuralinterface(transition)betweenthin-filmand

thesubstrate(b)abruptinterface(c)conformalcoating.保型覆蓋4

Whenthethin-filmtobeformedonthesurfaceisanoxideofthesubstrate

material,thentheprocessofthefilmgrowthbyoxidationofthelattercan

beconsidered.Ingeneral,whenexternalconditionsallow,atomsatthesurfaceofthesolidsubstratereactwithoxygen,oroxygencontainingspeciesin

theambientandthenucleationofthenativeoxideofthesubstratematerial

results.Dependingonthematerialandexternalconditions,itmaycontinuetowardformationofthemechanicallycoherentoxidefilm./ko??h?r?nt/連續(xù)的5FabricationProcesses5.4.2

Thin-filmgrowthbyoxidation:thermaloxidationofsiliconText5.4AdditiveProcesses/?k?st??rn(?)l/外部的/??mbi?nt/環(huán)境的5

Growthofanoxideonthesiliconsurfacecanbepromotedinvarious

ways.Usingmethodsemployedinsemiconductormanufacturingitcanbe

anoxidationprocessstimulatedbyoxygenplasma(plasmaoxidation),or

oxidationthroughelectrochemicalreactionintheliquidelectrolyte(anodic

oxidation).Insilicondevicemanufacturingthemostcommonistheprocess

usingthermalenergytopromoteoxidationofsilicon./??lektr?la?t/電解液5FabricationProcesses5.4.2

Thin-filmgrowthbyoxidation:thermaloxidationofsilicon5.4AdditiveProcesses/??nɑ?d?k/陽極的6

Thisclassofthin-filmdepositionmethodsisalsobroadlyusedinvarious

technicalendeavorsbeyondsemiconductordevicemanufacturing.Asthe

nameindicates,PVDprocessesinthepurestformarebasedonthephysicaleffectswithnochemicalreactionsinvolvementatanystageofthefilm

depositionprocess.Whatitmeansisthatthesourcematerialisphysically

transferredintheformofvaportothesubstratewhereitformsthin-film

withoutofitschemicalcomposition./?ve?p?r/蒸汽5FabricationProcesses5.4.3

PhysicalVaporDeposition(PVD)Text5.4AdditiveProcesses7

Toexecutephysicaltransferofthematterfromthesolidsourcetothe

substrate,sourcematerialneedstobevolatilizedandthentransportedfrom

thesourcetothesubstrateinthegas-phase.Topreventanydisturbanceof

thetransferprocess,aswellastopromotevolatilizationofthematerialto

bedeposited,theentireprocessmustbecarriedinvacuum.Thus,allPVD

processesareinherentlycarriedoutinthevacuumchambers./?n?her?ntli/固有的，本能的5FabricationProcesses5.4.3

PhysicalVaporDeposition(PVD)5.4AdditiveProcesses/?v?l?t?l??ze???n/揮發(fā)/?tr?nsp??rt/轉(zhuǎn)移/?vɑ?l?t?l?a?z/蒸發(fā)/d??st??rb?ns/干擾8

ThethreetechniquesidentifiedinFigandreferredtoasthermal

evaporation,sputtering,andmolecularbeamdeposition.Thelastonein

itsmostcommonversionisreferredtoasMolecularBeamEpitaxy(MBE)becauseofhowitispredominantlyused.5FabricationProcesses5.4.3

PhysicalVaporDeposition(PVD)5.4AdditiveProcessesProcessesinvolvedinthephysicalvapordeposition(a)thermalevaporation,(b)sputtering,and(c)molecularbeam./k??net?k/動力的/?s?bl??me??n/升華/pr??dɑ?m?n?ntli/主要地/m??lekj?l?r/分子的9

Thermalevaporation.Depositionofthinfilmbythermalevaporation

requiresatfirstmeltingofthesourcematerialafterwhichitsvaporization

takesplace.Evaporatedspecieswillthencondenseonthesurfaceofthe

substrateexposedtothevaporcoatingitwithfilmofthesourcematerial.

Tomakeundisturbedtransferofmaterialinthevaporphasepossible,any

residualgaseshavetobeevacuatedtoobtaininthedepositionchamber

vacuumofatleast10?6Torr.Undersuchconditions,thevapormoves

undisruptedfromthesourcetothesubstrate./?ve?p?r??ze??(?)n/蒸發(fā)5FabricationProcesses5.4.3

PhysicalVaporDeposition(PVD)5.4AdditiveProcesses/k?n?dens/冷凝/??nd??st??rbd/未被擾亂的105FabricationProcesses5.4.3

PhysicalVaporDeposition(PVD)5.4AdditiveProcessesProcessofthermalevaporation,(a)reactor,(b)filament,crucible,and

e-beamevaporationmodes./?f?l?m?nt/電熱絲/?kru?s?b(?)l/坩堝11

Sputtering.Physicalvapordepositionbysputteringusesplasmadischarge

inthespacebetweenthesubstrateandthesourcematerialto

carryoutthin-filmdepositionprocess.Plasmageneratedionsareacceleratedbyelectricfieldtowardthesourcematerial(referredtoasatarget),anduponimpingingonitssurfacecauseejectionofatomsbymomentumtransfer.Atomsejectedfromthetargetaremovingtowardthesubstratewaferwheretheyadheretothesurfaceformingathinsolidfilm./mo??ment?m/動量5FabricationProcesses5.4.3

PhysicalVaporDeposition(PVD)5.4AdditiveProcesses/?d?h?r/黏附125FabricationProcesses5.4.3

PhysicalVaporDeposition(PVD)5.4AdditiveProcessesSchematicillustrationofthesputterdepositionprocess./?k?θo?d/陰極/??no?d/陽極13

MolecularBeamEpitaxy,MBE.Neitherthermalevaporationnorsputteringallowthin-filmdepositionwithatomiclayerprecision,andhence,

neitheriscompatiblewiththeneedsofepitaxialdepositionforminganultrathinfilmofsingle-crystalonthelatticematchedsubstrate.Toachievethislevelofcontrol,speciesreleasedfromthe

sourcemustbeformedintoamolecularbeam.ThemethodemployingmolecularbeamsforthepurposeofepitaxialdepositionisknownasMolecularBeamEpitaxy(MBE)andisarguablyamongthemostimportanttoolsofnanotechnologyincludingitsusesinadvancedsemiconductorengineering./?ɑ?rɡju?bli/可以認(rèn)為地5FabricationProcesses5.4.3

PhysicalVaporDeposition(PVD)5.4AdditiveProcesses14

Incontrasttophysicalvapordeposition,wherethematerialisdeposited

withoutchangingitschemicalcomposition,inChemicalVaporDeposition

(CVD),depositedmaterialisactuallyformedasaresultofthechemicalreactioninthegas-phaseinsidetheprocesschamber.Thereactiontakesplace

onthesurfaceofthesubstrate,orinitsimmediatevicinity.Thereactants

aresuppliedinthegas-phase,andthechemicalreactionsinvolvedaresuch

thatthematerialdepositedistheonlysolid-stateproductofreaction.All

byproductsofthereactionareinthegas-phase,andhence,canberemoved

fromthereactionchamberloadedwithsubstratewafers./ri??kt?nt/反應(yīng)物5FabricationProcesses5.4.4

ChemicalVaporDeposition(CVD)Text5.4AdditiveProcesses/v??s?n?ti/鄰近155FabricationProcesses5.4.4

ChemicalVaporDeposition(CVD)5.4AdditiveProcessesCVDreactions(a)thermaldecomposition,(b)chemicalreactionbetweentwogases./?ɡ?si?s/氣態(tài)的/?di??kɑ?mp??z??n/分解/?di??kɑ?mp??z??n/分解/ri??kt?nt/反應(yīng)物16LowPressureCVD,LPCVD.

ThefeaturedistinguishingvariousmainstreamCVDschemesisthepressureatwhichprocessesiscarriedout.

Withpressureofreactantsintherangefrom0.1Torrto2TorrandusingthesameasAPCVDchemistry,LPCVDprocessesproducepurerfilmsfeaturingimprovedstoichiometry,lowerdefectdensity,betterthicknessuniformity,andsuperiorstepcoverage.Asaresult,theLPCVDisthemostwidelyusedCVDmethod./?st??k??ɑ?m?tr?/化學(xué)計量學(xué)5FabricationProcesses5.4.4

ChemicalVaporDeposition(CVD)5.4AdditiveProcesses/?ju?n??f??rm?ti/均勻性17PlasmaEnhancedCVD,PECVD.

InthecaseswhenCVDfilmsare