1、Optical Navigation DivisionAdvanced Wireless Semiconductor Division薄膜體聲波諧振器及其制造方法薄膜體聲波諧振器及其制造方法關文海關文海 2012015 5年年2 2月月3 3日日Advance Wireless Semiconductor DivisionHunterSun Electronics Co., Ltd. Confidential and Proprietary背景技術背景技術Advance Wireless Semiconductor DivisionHunterSun Electronics Co., Ltd.

2、 Confidential and Proprietary具有反射層的具有反射層的FBAR具有反射層的現有技術中FBAR的剖視圖Advance Wireless Semiconductor DivisionHunterSun Electronics Co., Ltd. Confidential and Proprietary具有氣隙的現有技術中的FBA剖視圖具有氣隙的具有氣隙的FBARAdvance Wireless Semiconductor DivisionHunterSun Electronics Co., Ltd. Confidential and Proprietary解決的方法解決

3、的方法提供支撐層提供支撐層帶有支撐層的氣隙結構的FBAR缺點缺點Advance Wireless Semiconductor DivisionHunterSun Electronics Co., Ltd. Confidential and Proprietary翼尖問題翼尖問題Advance Wireless Semiconductor DivisionHunterSun Electronics Co., Ltd. Confidential and Proprietary上述問題的解決方法上述問題的解決方法剖視圖第一特性第一特性Advance Wireless Semiconductor Di

4、visionHunterSun Electronics Co., Ltd. Confidential and Proprietary剖視圖第二特性第二特性Advance Wireless Semiconductor DivisionHunterSun Electronics Co., Ltd. Confidential and Proprietary制造步驟制造步驟a一、絕緣層的形成一、絕緣層的形成絕緣層102可以通過以下兩種方法：Advance Wireless Semiconductor DivisionHunterSun Electronics Co., Ltd. Confidentia

5、l and Proprietary二、犧牲層的形成二、犧牲層的形成bAdvance Wireless Semiconductor DivisionHunterSun Electronics Co., Ltd. Confidential and Proprietary三、氣隙形狀的形成三、氣隙形狀的形成覆蓋光刻膠刻蝕cdAdvance Wireless Semiconductor DivisionHunterSun Electronics Co., Ltd. Confidential and Proprietary四、支撐層的形成四、支撐層的形成ef覆蓋一層絕緣材料，絕緣材料可以是氮化硅、為氧化

6、硅、氧化鋁等Advance Wireless Semiconductor DivisionHunterSun Electronics Co., Ltd. Confidential and Proprietary五、激活區的形成五、激活區的形成ghAdvance Wireless Semiconductor DivisionHunterSun Electronics Co., Ltd. Confidential and Proprietary六、電極的形成六、電極的形成i電極107、109的材料可以用Al、W、Au、Pt等 Advance Wireless Semiconductor DivisionHunterSun Electronics Co., Ltd. Confidential and Proprietary七、氣隙的刻蝕七、氣隙的刻蝕通過通孔H3來對多晶硅進行刻蝕，形成氣隙A3。 注意事項：在干刻蝕過程前在約140攝氏度的溫度烘焙該FBAR約10分鐘，以便防止二氟化氙形成HF污染襯底101的表面。jAdvance Wireless Semiconductor DivisionHunterSun Electronics Co., Ltd. Confidential and Proprietary總結總結