1、探測(cè)器自身放射性本底CsI crystalCsI Powder21/22/1111ttteaea脈沖形狀甄別脈沖形狀甄別 PSDPulse Shape DiscriminationiiiAtAtQuenching factor (ionization yield energy)thReeREoutputeeoutputRREeRREELLLL溝道效應(yīng)DAMA/LIBRA NaI(Tl) Scintillator at Gran Sasso : total 0.82 ton-year dataObserve annual modulation in the 2-6 keV single-hit

2、signal band, total 11 cycles, 8s s Reject gamma by PSDNo modulations at higher energy & for multiple-hits December30 km/s 232 km/s60 June30 km/sNaI晶體晶體實(shí)驗(yàn)實(shí)驗(yàn)multiple-hits residual rate (green points) vs single-hit residual rate (red points) Single-Hit Power Spectrum Single Hit 2-6 keV Signal Regio

3、n DAMA/NaI (7 years) + DAMA/LIBRA (4 years) Total exposure: 300555 kg day = 0.82 ton yr表 4-1： 各種常用閃爍體的性能比較 材料 最強(qiáng)發(fā)光 波長(zhǎng)(nm) 發(fā)光衰減時(shí)間 折射率 密度 (g/cm3) 光產(chǎn)額 (光子/MeV) NaI(Tl) 410 0.23s 1.85 3.67 42000 CsI(Tl) 565 1.0s 1.79 4.51 55000 ZnS(Ag) 450 0.2s 2.4 4.09 8Li(Eu) 480 1.4s 1.95 4.08 Li 玻璃 395.9 75ns 1.53 2

4、.5 BGO 480 0.3s 2.15 7.13 8900 BaF2 310 6s/ 0.6ns 1.56 4.89 9900 CWO 500 5s 2.3 7.9 19700 蒽 447 30ns 1.62 1.25 芪 410 4.5ns 1.63 1.16 液體閃爍體 420 2.44ns 1.52 0.9 HP Ge detector / PC Ge detectorHigh efficiencyHigh resolution Large massPure materialLow noise/ Low threshold ?10-710-610-610-510-3h lifetime

5、 (s) h?10-810-510-610-610-3e lifetime (s) e70040010100440,000h mobility h(cm2/Vs)110080001000110010040,000e mobility e(cm2/Vs)0.140.090.190.08Fano factor4.24.64.44.22.97e-h pair creation energy (eV)1.61.431.571.502.130.74Band gap (eV)13, 5131, 3348, 30, 5248, 5280, 5332Atomic numberAlSbGaAsCdZnTeCdT

6、eHgI2Ge (77K)Material?10-710-610-610-510-3h lifetime (s) h?10-810-510-610-610-3e lifetime (s) e70040010100440,000h mobility h(cm2/Vs)110080001000110010040,000e mobility e(cm2/Vs)0.140.090.190.08Fano factor4.24.64.44.22.97e-h pair creation energy (eV)1.61.431.571.502.130.74Band gap (eV)13, 5131, 3348

7、, 30, 5248, 5280, 5332Atomic numberAlSbGaAsCdZnTeCdTeHgI2Ge (77K)MaterialSemiconductor detector materialsHPGeHPGe 的體積，質(zhì)量最大的體積，質(zhì)量最大( Kg)( Kg)HPGeHPGe 的能量分辨最好的能量分辨最好三種三種HPGeHPGe探測(cè)器探測(cè)器planarCoaxial detectorVbp (n)p+ (n+)n+ (p+)S0S1pPCGe detector反沖電子或核的次級(jí)電子空穴的收集形成信號(hào)反沖電子或核的次級(jí)電子空穴的收集形成信號(hào)- VQtCharge induct