1 WaferFabricationProcessTechnology CMOS 2 3 Content 0 5umCMOSprocessflow crosssection0 18umCMOSprocessflow crosssectionPCMintroduction 4 CMOS Startingwithasiliconwafer CrossSectionoftheSiliconWafer MagnifyingtheCrossSection 5 CMOS n p wellFormation GrowThinOxide DepositNitride DepositResist siliconsubstrate UVExposure DevelopResist EtchNitride n wellImplant RemoveResist 6 CMOS n p wellFormation siliconsubstrate GrowOxide n well RemoveNitride p wellImplant RemoveOxide Twin wellDrive in RemoveDrive InOxide 7 CMOS LOCOSIsolation GrowThinOxide DepositNitride DepositResist UVExposure DevelopResist EtchNitride RemoveResist 8 CMOS LOCOSIsolation DepositResist UVExposure DevelopResist FieldImplantB RemoveResist GrowFieldOxide RemoveNitride RemoveOxide 9 GrowScreenOxide CMOS TransistorFabrication VtImplant DepositResist UVExposure DevelopResist PunchthroughImplant RemoveResist RemoveOxide Fox 10 GrowGateOxide CMOS TransistorFabrication DepositPolySi PolySiImplant DepositResist UVExposure DevelopResist EtchPolySi RemoveResist Fox 11 CMOS TransistorFabrication DepositThinOxide DepositResist UVExposure DevelopResist n LDDImplant RemoveResist Fox polySi polySi 12 CMOS TransistorFabrication DepositResist UVExposure DevelopResist p LDDImplant RemoveResist DepositSpacerOxide EtchSpacerOxide Fox polySi polySi 13 CMOS TransistorFabrication DepositResist UVExposure DevelopResist n S DImplant RemoveResist Fox polySi polySi 14 CMOS TransistorFabrication DepositResist UVExposure DevelopResist p S DImplant RemoveResist Fox polySi polySi n n 15 CMOS Contacts Interconnects DepositBPTEOS BPSGReflow PlanarizationEtchback DepositResist UVExposure DevelopResist ContactEtchback RemoveResist Fox polySi polySi n n p p 16 CMOS Contacts Interconnects DepostMetal1 DepositResist UVExposure DevelopResist EtchMetal1 RemoveResist Fox polySi polySi p p n n BPTEOS 17 CMOS Contacts Interconnects DepositIMD1 DepositSOG PlanarizationEtchback DepositResist UVExposure DevelopResist ViaEtch RemoveResist Fox polySi polySi p p Metal1 n n BPTEOS 18 CMOS Contacts Interconnects DepositMetal2 DepositResist UVExposure DevelopResist EtchMetal2 RemoveResist DepositPassivation Fox polySi polySi p p Metal1 n n BPTEOS IMD1 SOG 19 0 18umProcessCrosssection Padoxide PSubstrate ODSiN 20 0 18umProcessCrosssection PSubstrate 21 0 18umProcessCrosssection PSubstrate Pwellmask Pwell NAPT VTN B11Pwell NAPT VTNImplant Nwellmask P31Nwell P APT VTPImplant Nwell PAPT VTP 22 0 18umProcessCrosssection PSubstrate Pwell NAPT VTN Nwell Nfield PAPT Mask132 HFWetdipandGrowGateoxide 2 23 0 18umProcessCrosssection Poly NLDD PSubstrate NLDD Pwell NAPT VTN Nwell PAPT VTP Poly NLDDimplant NLDD114mask PLDD113mask PLDDimplant 24 0 18umProcessCrosssection Poly PLDD PLDD NLDD PSubstrate NLDD Pwell NAPT VTN Nwell PAPT VTP Poly PLDD197mask 3 3V 1 8V P pocket PLDDimp NLDD116mask 3 3V NLDD2 1As NLDD2 2P31imp 25 0 18umProcessCrosssection Poly PSubstrate Pwell NAPT Nwell PAPT VTP Poly PSD NSD NSD NSD PSD PSD PSD197mask NSD198mask NSDimp 26 0 18umProcessCrosssection Poly PSubstrate Pwell NAPT Nwell PAPT VTP Poly PSD NSD NSD NSD PSD PSD 27 0 18umProcessCrosssection Poly PSubstrate Pwell NAPT Nwell PAPT VTP Poly PSD NSD NSD NSD PSD PSD W W W W ILD Trenchoxide 28 0 18umProcessCrosssection Polyi PSubstrate Pwell NAPT Nwell PAPT VTP Poly PSD NSD NSD NSD PSD PSD W W W W ILD Trenchoxide 29 0 18umProcessCrosssection Poly PSubstrate Pwell NAPT Nwell PAPT VTP Polyi PSD NSD NSD NSD PSD PSD W W W W ILD Trenchoxide IMD 1 W W W W 30 0 18umProcessCrosssection Poly PSubstrate Pwell NAPT Nwell PAPT VTP Poly PSD NSD NSD NSD PSD PSD W W W W ILD Trenchoxide IMD 1 W W W W Metal 1 Metal 2 31 0 18umProcessCrosssection Metal 1 IMD 1 A Si Pwell NAPT Nwell PAPT VTP Poly PSD NSD NSD NSD PSD PSD W W W W ILD Trenchoxide Metal 4 IMD 4 W W W IMD 5 Metal 6 IMD 3 W W Metal 2 IMD 2 Metal 5 W W W W W W W W 32 PCM PCM就是ProcessControl Monitor的簡(jiǎn)稱 同時(shí) PCM也稱為WAT WaferAcceptTest 33 PCM Purpose PCM主要把線上一些工藝異常進(jìn)行及時(shí)的反映 在產(chǎn)品入庫(kù)前對(duì)其進(jìn)行最后一道質(zhì)量的檢驗(yàn) 其作用歸納起來(lái) 主要有如下幾點(diǎn) 1 對(duì)產(chǎn)品進(jìn)行參數(shù)質(zhì)量檢驗(yàn) 2 監(jiān)控在線工藝對(duì)電參數(shù)的影響 以及工藝的波動(dòng) 3 判定WAFERPASS FAIL的一個(gè)重要依據(jù) 客戶會(huì)根據(jù)PCM測(cè)試情況 決定接收 或拒收WAFER 4 Yieldanalysis 34 PCM keyitems 1 Vt 2 BVD 3 Ion 4 Leakage 5 SheetRs 6 Rc 7 Capacitor 8 Others 35 PCM TestLocation 36 PCM MOSTransistor 37 PCM Vtmeasure 38 PCM BVDmaesure 39 PCM Leakagemeasure 40 PCM I Vcurve 41 PCM InterPolyCapacitor METAL POLY2 POLY1 POLY2 POLY1 FOX P SUB W CapacitorWidth CAPACITOR CAPACITOR 42 PCM PolyRs LowRs HighRs PolyResistorMarkinglayer 43 PCM NWRs P SUB NWell Metal N Contact NCOMP N implant Nwell N NwellResistorMarkingLayer 44 PCM N Rs P SUB Metal Contact NCOMP N implant N N ResistorMarkingLayer 45 PCM P Rs P SUB Metal PCOMP P implant Nwell P Nwell 46 PCM P NW PCOMP P implant P SUB NWell Metal P N Contact NCOMP N implant Nwell 47 PCM N