微專業---半導體制造技術課程：半導體工程專業英語ContentsSemiconductorProperties半導體特性01SemiconductorMaterials半導體材料02SemiconductorDeviceandHowTheyareUsed半導體器件及其使用03ProcessTechnology工藝技術04FabricationProcesses制造工藝05SemiconductorMaterialsandProcessCharacterization半導體材料與工藝表征06SemiconductorDevicesandHowTheyAreUsed3.1SemiconductorDevices3.2ConstructingSemiconductorDevice3.3Two-TerminalDevices:Diodes3.4ThreeTerminalDevices:Transistors3.5IntegratedCircuits3.6ImageDisplayingandImageSensingDevices3.7Micro-Electro-MechanicalSystems(MEMS)andSensors3.8WearableandImplantableSemiconductorDeviceSystems034Introduction

Therearetwofundamentalelementsthatneedtobeincludedintheprocess

ofconvertingsemiconductormaterialintofunctionaldevice.First,itneeds

tobeassuredthattheelectriccurrentcanflowinandoutofsemiconductor

comprisingadeviceintheundisturbedfashion.Toaccomplishthistask,

ohmiccontactsneedtobeformedatthedeviceinputandoutput.Assuming

ohmiccontactsareinplace,thesecondfeaturedefiningsemiconductordevice

isitsabilitytocontroltheflowofcurrentpassingthroughitsbody.To

accomplishthislastfeatureapotentialbarriermustbebuiltintothedevice

structure.

/??nd??st??rbd/不受干擾的3

SemiconductorDevicesandHowTheyAreUsed

3.2ConstructingSemiconductorDevice/??kɑ?mpl??/完成53

SemiconductorDevicesandHowTheyAreUsed

3.2ConstructingSemiconductorDevice3.2.1

OhmiccontactsTextOhmiccontactsreferstotheelectricalcontactbetweenmetalandsemiconductorfeaturingverylowresistance.Akeyroleofanohmiccontactistoallowundisturbedinanywayflowofthecurrentinandoutof

thedeviceregardlessofthedirectiontheappliedvoltage.Inthiswayconnectionbetweendeviceandoutsidecircuitryisnotinterferingwithdevice

operation./??nd??st??rbd/不受干擾的/?s??rk?tr?/電路/??nt?r?f?r?g/干涉的6(a)Apieceofsemiconductormaterialequippedwithohmiccontacts,

(b)undisturbed,uniformdistributionofthepotentialalongsemiconductorwith

ohmiccontacts,(c)fullysymmetricoutputcurrent-voltagecharacteristics./??nt?r?f?r??/對稱的3

SemiconductorDevicesandHowTheyAreUsed

3.2ConstructingSemiconductorDevice3.2.1

Ohmiccontacts/??nd??st??rbd未被擾亂的7

Toaccomplishvoltage

controlledsemiconductordeviceswithnon-linear,non-symmetriccurrentvoltage(I-V)characteristics,apotentialbarriermustbeformedinthepieceofsemiconductormaterialequippedwithohmiccontacts.Theappliedvoltagedependentheightofthepotentialbarriercanthenbeusedtocontroldevicecurrent.3

SemiconductorDevicesandHowTheyAreUsed

3.2ConstructingSemiconductorDevice3.2.2

PotentialbarrierText8

Ingeneral,apotentialbarrierisformedwhensemiconductorisbrought

tophysicalcontactwithothermaterialfeaturingdifferentworkfunctions.

Optionsintheregardincludecontactbetweensemiconductorandsemiconductorfeaturingdifferentworkfunctions,orcontactbetweensemiconductor

andmetal,orotherconductor,featuringdifferentworkfunction.

/r??ɡɑ?rd/關于，認為3

SemiconductorDevicesandHowTheyAreUsed

3.2ConstructingSemiconductorDevice3.2.2

Potentialbarrier9

Ingeneral,apotentialbarrierisformedwhensemiconductorisbroughttophysicalcontactwithothermaterialfeaturingdifferentworkfunctions.Themostobviouswaytocreateapotentialbarrierinsemiconductorsis

tobringtocontacttwosemiconductorswithdifferentworkfunctions.Actually,thesemaybetwopiecesofthesamematerialsuchassilicon,providing

however,eachofthemisdopedatthedifferentleveland/orfeaturedifferentconductivitytype(p-typesemiconductorandn-typesemiconductor),

andthus,featuredifferentworkfunction./do?pt/摻雜的3

SemiconductorDevicesandHowTheyAreUsed

3.2ConstructingSemiconductorDevice3.2.2

Potentialbarrier103

SemiconductorDevicesandHowTheyAreUsed

3.2ConstructingSemiconductorDevice3.2.2

Potentialbarrier(a)Thep-n