1、The Role of Mask in IC Industry DESIGNMASKWAFERTESTINGASSEMBLY第1頁/共26頁第一頁，共26頁。How Does Mask Work in Wafer FAB -Stepper第2頁/共26頁第二頁，共26頁。How Does Mask Work in Wafer FAB -Scanner第3頁/共26頁第三頁，共26頁。Raw Material of Mask BlankBIM (binary mask)PSM (phase shift mask) A. KRF-PSM B. ARF-PSM第4頁/共26頁第四頁，共26頁。Siz

2、e of Blank 5inch 90mil(5009) 5inch 180mil(5018)6inch 120mil(6012) 6inch 250mil(6025)7inch 250mil(7015)What kind of mask SMIC FABs use?第5頁/共26頁第五頁，共26頁。Blank Component Binary BlankPSM BlankPhoto Resist(3K,4K,4650A)CrO&Chrome(1050A,700A)QuartzPhoto Resist(2K,3K,4KA)CrO&Chrome(1000,550A)QuartzM

3、oSi FilmPhoto Resist Opaque Metal FilmSubstratePhoto ResistOpaque Metal Film Phase Shift Layer Substrate第6頁/共26頁第六頁，共26頁。Blank Qz Characteristic RigidityHeat Expansion(ppm/oC)MaterialSodaliteSilicon-BorideQuartzRigidity540657615MaterialSoda limeSilicon-BorideQuartzCoefficient第7頁/共26頁第七頁，共26

4、頁。Blank Qz Characteristic Optics CharacterTransmission ( % ) 200300400020406080100QuartzSilicon-BorideSoda LimeWave Length(nm)Thats why we choose Quartz as the substrate of blank第8頁/共26頁第八頁，共26頁。How to Transfer Design to Mask? WriterProcessMetrologyVis-InspectClean/MountAIMSRepair1st InspectThr-Insp

5、ectSTARlightShippingDevelopStripEtch第9頁/共26頁第九頁，共26頁。Front-end Process Blank configurationPhoto-resistCr filmQuartzExposurePhoto-resist developWet etchPhoto-resist stripAEIASIRe-Etch ?AEI: After Etch CD measureASI: After Strip CD measureStep1Step2Step3Step4Step6Step5Step7第10頁/共26頁第十頁，共26頁。Front-end

6、Process Dry process ResistCrQzH+H+H+H+H+H+H+EBEBEBH+H+H+H+H+H+H+Exposure(EB1,EB2,EB3DUV,LB5,LB6)PEB(Post Exposure Bake)SFB2500,APB5500PAGAcid generationAcid diffusionDeprotection reactionDevelopment(SFD2500,ASP5500)S(CF2)3CF3O3SS(CF2)3CF3O3SH+OHORDry Etch(Gen3,Gen4)AEI, Re-etchStrip, ASI第11頁/共26頁第十一

7、頁，共26頁。Pellicle Component Pellicle MembraneMaterialWave LengthN.C.365nm (I-line)C.E.365, 248nm (I-line, DUV)F.C.193nm (ArF)Frame(Aluminum Alloy)Adhesive TapePellicle Membrane (25 um)Pellicle FrameDouble SideAdhesive TapeCrGlass第12頁/共26頁第十二頁，共26頁。What Pellicle Do? Top ContaminantObject PlanePellicle

8、FilmBottom ContaminantContaminant on Pattern PlaneLen SystemUnfocused Top Contaminant ImageUnfocused Bottom Contaminant ImageImage PlaneFocused Contaminant Image on WaferMask PatternWafer SurfaceLight第13頁/共26頁第十三頁，共26頁。Particle Immunity Control Particle size (D) V.S. Minimum Stand-off (T)T = (4M/N.A

9、.)DT = (4M/N.A.)DM - MagnificationN.A.- Numerical Aperture of the LensFor glass side particle, T = 2.3mmD1T1T2D2第14頁/共26頁第十四頁，共26頁。Mask Quality Control C.D.DefectRegistration第15頁/共26頁第十五頁，共26頁。CD (critical dimension) measurement第16頁/共26頁第十六頁，共26頁。Defect TypeOpaque spotParticleProtrusionIntrusionCont

10、aminationPinholeMissing ARGlass fractureBreakGlass seedBridgeSolvent spotHard DefectSoft DefectMiss Size第17頁/共26頁第十七頁，共26頁。How to Do Mask Defect Inspect 第18頁/共26頁第十八頁，共26頁。Mask Layout Exemplification Normal S S +FiducialTest KeyTest LineMain PatternScribe LineGlobal MarkQA CellBarcodeMulti-Chip +Fid

11、ucialTest KeyTest LineScribe LineGlobal MarkQA Cell+A ChipB ChipC ChipD Chip+第19頁/共26頁第十九頁，共26頁。The Principle of STARlight InspectThe Model in SMIC Mask Shop(SL3UV) can only detect pattern sideSTAR: Synchronous Trans. And Reflected第20頁/共26頁第二十頁，共26頁。What is Registration 第21頁/共26頁第二十一頁，共26頁。Registrat

12、ion Result Exemplification Mask:6”, t=0.25”QuartzMeasurement Area:Array:8*10Variation Quantity: nmMaxminX7.20.0Y22.00.2第22頁/共26頁第二十二頁，共26頁。How Does OPC Work? comparisondesign/maskWith OPCwafer第23頁/共26頁第二十三頁，共26頁。OPC Pattern on Mask 0.64 um Line Pattern0.25 um Serif for 0.6 um Contact0.57 Line Pattern0.27 um assistant bar for 0.72 um Line第24頁/共26頁第二十四頁，共26頁。Over-all flowCustomerFTPNote: Yellow box is activities cust